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Article: Emission bands of nitrogen-implantation induced luminescent centers in ZnO crystals: experiment and theory

TitleEmission bands of nitrogen-implantation induced luminescent centers in ZnO crystals: experiment and theory
Authors
Dai, XMXu, SJLing, CCBrauer, GAnwand, WSkorupa, W
KeywordsBand edge
Brownian oscillators
Electron phonon couplings
Electronic levels
Emission bands
Issue Date2012
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2012, v. 112 n. 4, article no. 046102 How to Cite?
DOI: http://dx.doi.org/10.1063/1.4749402
AbstractHigh quality ZnO crystals with the sharp band-edge excitonic emission and very weak green emission were implanted by nitrogen ions. An additional red emission band was observed in the as-implanted ZnO crystal and investigated as a function of temperature. By employing the underdamped multimode Brownian oscillator model for the general electron-phonon coupling system, both the original green and nitrogen-implantation induced red emission bands were theoretically reproduced at different temperatures. Excellent agreement between the theory and the experiment enables us determine the energetic positions of the pure electronic levels associated with the green and red emission bands, respectively. The determined energy level of the red emission band is in good agreement with the data obtained from the deep-level transient spectroscopy measurements. © 2012 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/164515
ISSN
0021-8979
2021 Impact Factor: 2.877
2020 SCImago Journal Rankings: 0.699
ISI Accession Number ID
WOS:000308410100108
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorDai, XMen_HK
dc.contributor.authorXu, SJen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorBrauer, Gen_HK
dc.contributor.authorAnwand, Wen_HK
dc.contributor.authorSkorupa, Wen_HK
dc.date.accessioned2012-09-20T08:04:54Z-
dc.date.available2012-09-20T08:04:54Z-
dc.date.issued2012en_HK
dc.identifier.citationJournal of Applied Physics, 2012, v. 112 n. 4, article no. 046102-
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/164515-
dc.description.abstractHigh quality ZnO crystals with the sharp band-edge excitonic emission and very weak green emission were implanted by nitrogen ions. An additional red emission band was observed in the as-implanted ZnO crystal and investigated as a function of temperature. By employing the underdamped multimode Brownian oscillator model for the general electron-phonon coupling system, both the original green and nitrogen-implantation induced red emission bands were theoretically reproduced at different temperatures. Excellent agreement between the theory and the experiment enables us determine the energetic positions of the pure electronic levels associated with the green and red emission bands, respectively. The determined energy level of the red emission band is in good agreement with the data obtained from the deep-level transient spectroscopy measurements. © 2012 American Institute of Physics.en_HK
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCopyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2012, v. 112 n. 4, article no. 046102 and may be found at https://doi.org/10.1063/1.4749402-
dc.subjectBand edge-
dc.subjectBrownian oscillators-
dc.subjectElectron phonon couplings-
dc.subjectElectronic levels-
dc.subjectEmission bands-
dc.titleEmission bands of nitrogen-implantation induced luminescent centers in ZnO crystals: experiment and theoryen_HK
dc.typeArticleen_HK
dc.identifier.emailXu, SJ: sjxu@hkucc.hku.hken_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hk-
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.4749402en_HK
dc.identifier.scopuseid_2-s2.0-84865850327en_HK
dc.identifier.hkuros209498en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-84865850327&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume112en_HK
dc.identifier.issue4-
dc.identifier.spagearticle no. 046102-
dc.identifier.epagearticle no. 046102-
dc.identifier.isiWOS:000308410100108-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridSkorupa, W=7102608722en_HK
dc.identifier.scopusauthoridAnwand, W=9432786300en_HK
dc.identifier.scopusauthoridBrauer, G=7101650540en_HK
dc.identifier.scopusauthoridLing, CC=55285605700en_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridDai, XM=25960763800en_HK
dc.identifier.issnl0021-8979-

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