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Article: Interfaces between 8-hydroxyquinoline aluminium and cesium as affected by their deposition sequences
Title | Interfaces between 8-hydroxyquinoline aluminium and cesium as affected by their deposition sequences |
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Authors | |
Issue Date | 2003 |
Publisher | Elsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/cplett |
Citation | Chemical Physics Letters, 2003, v. 367 n. 5-6, p. 753-758 How to Cite? |
Abstract | The electronic structures of tris(8-hydroxyquinoline) aluminum (Alq3) deposited on clean or Cs pre-covered Ag substrates have been studied by ultraviolet photoelectron spectroscopy. Interface of Cs deposited on Alq 3 has also been prepared for comparison. For a low coverage of Cs on Ag, deposition of Alq 3 on top of the Cs cannot induce any new electronic features. The low work function of the Cs reduces the barrier height of electron injection at the Alq 3=Cs=Ag contact to 0.3 eV, as compared to 1.6 eV for the Alq 3/Ag contact. For high Cs coverage, the Cs may diffuse as neutral atoms and undergo oxidation into the Alq 3 layer and form a new gap state at 0.9 eV above the Alq 3 highest occupied state, which is the same as that of Cs deposited on the Alq 3. © 2002 Published by Elsevier Science B.V. |
Persistent Identifier | http://hdl.handle.net/10722/167778 |
ISSN | 2023 Impact Factor: 2.8 2023 SCImago Journal Rankings: 0.502 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lai, SL | en_US |
dc.contributor.author | Fung, MK | en_US |
dc.contributor.author | Bao, SN | en_US |
dc.contributor.author | Tong, SW | en_US |
dc.contributor.author | Chan, MY | en_US |
dc.contributor.author | Lee, CS | en_US |
dc.contributor.author | Lee, ST | en_US |
dc.date.accessioned | 2012-10-08T03:11:26Z | - |
dc.date.available | 2012-10-08T03:11:26Z | - |
dc.date.issued | 2003 | en_US |
dc.identifier.citation | Chemical Physics Letters, 2003, v. 367 n. 5-6, p. 753-758 | en_US |
dc.identifier.issn | 0009-2614 | en_US |
dc.identifier.uri | http://hdl.handle.net/10722/167778 | - |
dc.description.abstract | The electronic structures of tris(8-hydroxyquinoline) aluminum (Alq3) deposited on clean or Cs pre-covered Ag substrates have been studied by ultraviolet photoelectron spectroscopy. Interface of Cs deposited on Alq 3 has also been prepared for comparison. For a low coverage of Cs on Ag, deposition of Alq 3 on top of the Cs cannot induce any new electronic features. The low work function of the Cs reduces the barrier height of electron injection at the Alq 3=Cs=Ag contact to 0.3 eV, as compared to 1.6 eV for the Alq 3/Ag contact. For high Cs coverage, the Cs may diffuse as neutral atoms and undergo oxidation into the Alq 3 layer and form a new gap state at 0.9 eV above the Alq 3 highest occupied state, which is the same as that of Cs deposited on the Alq 3. © 2002 Published by Elsevier Science B.V. | en_US |
dc.language | eng | en_US |
dc.publisher | Elsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/cplett | en_US |
dc.relation.ispartof | Chemical Physics Letters | en_US |
dc.title | Interfaces between 8-hydroxyquinoline aluminium and cesium as affected by their deposition sequences | en_US |
dc.type | Article | en_US |
dc.identifier.email | Chan, MY:chanmym@hku.hk | en_US |
dc.identifier.authority | Chan, MY=rp00666 | en_US |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.doi | 10.1016/S0009-2614(02)01790-6 | en_US |
dc.identifier.scopus | eid_2-s2.0-0037427660 | en_US |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-0037427660&selection=ref&src=s&origin=recordpage | en_US |
dc.identifier.volume | 367 | en_US |
dc.identifier.issue | 5-6 | en_US |
dc.identifier.spage | 753 | en_US |
dc.identifier.epage | 758 | en_US |
dc.identifier.isi | WOS:000180359100037 | - |
dc.publisher.place | Netherlands | en_US |
dc.identifier.scopusauthorid | Lai, SL=7402937153 | en_US |
dc.identifier.scopusauthorid | Fung, MK=7101955091 | en_US |
dc.identifier.scopusauthorid | Bao, SN=7201558753 | en_US |
dc.identifier.scopusauthorid | Tong, SW=36891091800 | en_US |
dc.identifier.scopusauthorid | Chan, MY=7402597725 | en_US |
dc.identifier.scopusauthorid | Lee, CS=35364273600 | en_US |
dc.identifier.scopusauthorid | Lee, ST=7601407495 | en_US |
dc.identifier.issnl | 0009-2614 | - |