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Article: Burnout and gate rupture of power MOS transistors with fission fragments of 252Cf

TitleBurnout and gate rupture of power MOS transistors with fission fragments of 252Cf
Authors
Tang, BQWang, YPGeng, BChen, XHHe, CHYang, HL
KeywordsPower Mos Transistor
Single Event Burnout
Single Event Gate Rupture
Issue Date2000
Publisher中國原子能科學研究院. The Journal's web site is located at http://yzjs.chinajournal.net.cn/
Citation
Yuanzineng Kexue Jishu/Atomic Energy Science And Technology, 2000, v. 34 n. 4, p. 339-343 How to Cite?
AbstractA study to determine the single event burnout (SEB) and single event gate rupture (SEGR) sensitivities of power MOSFET devices is carried out by exposure to fission fragments from 252Cf source. Presented are the test method, test results, a description of observed burnout current waveforms and a discussion of a possible failure mechanism. The test results include the observed dependence upon applied drain or gate to source bias and effect of external capacitors and limited resistors.
Persistent Identifierhttp://hdl.handle.net/10722/172384
ISSN
1000-6931
2020 SCImago Journal Rankings: 0.239
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorTang, BQen_US
dc.contributor.authorWang, YPen_US
dc.contributor.authorGeng, Ben_US
dc.contributor.authorChen, XHen_US
dc.contributor.authorHe, CHen_US
dc.contributor.authorYang, HLen_US
dc.date.accessioned2012-10-30T06:22:16Z-
dc.date.available2012-10-30T06:22:16Z-
dc.date.issued2000en_US
dc.identifier.citationYuanzineng Kexue Jishu/Atomic Energy Science And Technology, 2000, v. 34 n. 4, p. 339-343en_US
dc.identifier.issn1000-6931en_US
dc.identifier.urihttp://hdl.handle.net/10722/172384-
dc.description.abstractA study to determine the single event burnout (SEB) and single event gate rupture (SEGR) sensitivities of power MOSFET devices is carried out by exposure to fission fragments from 252Cf source. Presented are the test method, test results, a description of observed burnout current waveforms and a discussion of a possible failure mechanism. The test results include the observed dependence upon applied drain or gate to source bias and effect of external capacitors and limited resistors.en_US
dc.languageengen_US
dc.publisher中國原子能科學研究院. The Journal's web site is located at http://yzjs.chinajournal.net.cn/en_US
dc.relation.ispartofYuanzineng Kexue Jishu/Atomic Energy Science and Technologyen_US
dc.subjectPower Mos Transistoren_US
dc.subjectSingle Event Burnouten_US
dc.subjectSingle Event Gate Ruptureen_US
dc.titleBurnout and gate rupture of power MOS transistors with fission fragments of 252Cfen_US
dc.typeArticleen_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0034216576en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0034216576&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume34en_US
dc.identifier.issue4en_US
dc.identifier.spage339en_US
dc.identifier.epage343en_US
dc.publisher.placeChinaen_US
dc.identifier.scopusauthoridTang, BQ=10044330900en_US
dc.identifier.scopusauthoridWang, YP=9747395700en_US
dc.identifier.scopusauthoridGeng, B=36831507500en_US
dc.identifier.scopusauthoridChen, XH=14039940800en_US
dc.identifier.scopusauthoridHe, CH=26424615900en_US
dc.identifier.scopusauthoridYang, HL=16308460200en_US
dc.identifier.issnl1000-6931-

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