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Article: Arsenic surface segregation and incorporation in Si and Si1-xGex during gas source molecular beam epitaxy
Title | Arsenic surface segregation and incorporation in Si and Si1-xGex during gas source molecular beam epitaxy |
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Authors | |
Issue Date | 1997 |
Publisher | Elsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgro |
Citation | Journal Of Crystal Growth, 1997, v. 173 n. 3-4, p. 336-342 How to Cite? |
Abstract | The surface segregation of As in Si and Si1-xGex during gas source molecular beam epitaxy (GSMBE) has been investigated. It is shown that the segregation process is suppressed in the alloy compared with pure Si. The segregation energy is shown to be dependent on growth temperature and has been attributed to a change of surface hydrogen coverage. Surface hydrogen blocks surface sites, thus acting as a surfactant to suppress As segregation. Arsenic incorporation from AsH3 involves dissociative chemisorption via empty surface sites. The balance between the rate of dissociation, surface segregation and desorption results in a temperature and Ge concentration dependence of the net effective flux of As and consequently its concentration in the film. It has an upper limit of less than 1018 cm-3 in Si, but much higher concentrations can be achieved in SiGe alloys. |
Persistent Identifier | http://hdl.handle.net/10722/174739 |
ISSN | 2023 Impact Factor: 1.7 2023 SCImago Journal Rankings: 0.379 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
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dc.contributor.author | Xie, MH | en_US |
dc.contributor.author | Lees, AK | en_US |
dc.contributor.author | Fernandez, JM | en_US |
dc.contributor.author | Zhang, J | en_US |
dc.contributor.author | Joyce, BA | en_US |
dc.date.accessioned | 2012-11-26T08:47:10Z | - |
dc.date.available | 2012-11-26T08:47:10Z | - |
dc.date.issued | 1997 | en_US |
dc.identifier.citation | Journal Of Crystal Growth, 1997, v. 173 n. 3-4, p. 336-342 | en_US |
dc.identifier.issn | 0022-0248 | en_US |
dc.identifier.uri | http://hdl.handle.net/10722/174739 | - |
dc.description.abstract | The surface segregation of As in Si and Si1-xGex during gas source molecular beam epitaxy (GSMBE) has been investigated. It is shown that the segregation process is suppressed in the alloy compared with pure Si. The segregation energy is shown to be dependent on growth temperature and has been attributed to a change of surface hydrogen coverage. Surface hydrogen blocks surface sites, thus acting as a surfactant to suppress As segregation. Arsenic incorporation from AsH3 involves dissociative chemisorption via empty surface sites. The balance between the rate of dissociation, surface segregation and desorption results in a temperature and Ge concentration dependence of the net effective flux of As and consequently its concentration in the film. It has an upper limit of less than 1018 cm-3 in Si, but much higher concentrations can be achieved in SiGe alloys. | en_US |
dc.language | eng | en_US |
dc.publisher | Elsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgro | en_US |
dc.relation.ispartof | Journal of Crystal Growth | en_US |
dc.title | Arsenic surface segregation and incorporation in Si and Si1-xGex during gas source molecular beam epitaxy | en_US |
dc.type | Article | en_US |
dc.identifier.email | Xie, MH: mhxie@hku.hk | en_US |
dc.identifier.authority | Xie, MH=rp00818 | en_US |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.scopus | eid_2-s2.0-0031119152 | en_US |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-0031119152&selection=ref&src=s&origin=recordpage | en_US |
dc.identifier.volume | 173 | en_US |
dc.identifier.issue | 3-4 | en_US |
dc.identifier.spage | 336 | en_US |
dc.identifier.epage | 342 | en_US |
dc.identifier.isi | WOS:A1997XC98100016 | - |
dc.publisher.place | Netherlands | en_US |
dc.identifier.scopusauthorid | Xie, MH=7202255416 | en_US |
dc.identifier.scopusauthorid | Lees, AK=7202900980 | en_US |
dc.identifier.scopusauthorid | Fernandez, JM=7404575272 | en_US |
dc.identifier.scopusauthorid | Zhang, J=7601345343 | en_US |
dc.identifier.scopusauthorid | Joyce, BA=7102210065 | en_US |
dc.identifier.issnl | 0022-0248 | - |