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Article: On the switching behaviour of post-breakdown conduction in ultra-thin SiO 2 films

TitleOn the switching behaviour of post-breakdown conduction in ultra-thin SiO 2 films
Authors
Chen, TPTse, MSZeng, XFung, S
Issue Date2001
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst
Citation
Semiconductor Science And Technology, 2001, v. 16 n. 9, p. 793-797 How to Cite?
DOI: http://dx.doi.org/10.1088/0268-1242/16/9/310
AbstractSwitching between well defined states of post-breakdown conduction in ultra-thin SiO 2 films is observed in both I-V and time-domain voltage (current) measurements under constant low bias current (voltage). Using I-V measurements, single switching with two conduction states and multiple switching with more than two states was observed. The I-V characteristic of each state can be well modelled by the power law, and a convincing linear dependence is observed for each state when the I-V characteristics are plotted on a log-log scale. The switching behaviour is explained in terms of the on/off state of percolation paths of neutral electron traps due to de-trapping/trapping of the traps at certain SiO 2 lattice sites (strategic positions) during the measurements.
Persistent Identifierhttp://hdl.handle.net/10722/174809
ISSN
0268-1242
2021 Impact Factor: 2.048
2020 SCImago Journal Rankings: 0.712
ISI Accession Number ID
WOS:000170946500013
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorChen, TPen_US
dc.contributor.authorTse, MSen_US
dc.contributor.authorZeng, Xen_US
dc.contributor.authorFung, Sen_US
dc.date.accessioned2012-11-26T08:47:34Z-
dc.date.available2012-11-26T08:47:34Z-
dc.date.issued2001en_US
dc.identifier.citationSemiconductor Science And Technology, 2001, v. 16 n. 9, p. 793-797en_US
dc.identifier.issn0268-1242en_US
dc.identifier.urihttp://hdl.handle.net/10722/174809-
dc.description.abstractSwitching between well defined states of post-breakdown conduction in ultra-thin SiO 2 films is observed in both I-V and time-domain voltage (current) measurements under constant low bias current (voltage). Using I-V measurements, single switching with two conduction states and multiple switching with more than two states was observed. The I-V characteristic of each state can be well modelled by the power law, and a convincing linear dependence is observed for each state when the I-V characteristics are plotted on a log-log scale. The switching behaviour is explained in terms of the on/off state of percolation paths of neutral electron traps due to de-trapping/trapping of the traps at certain SiO 2 lattice sites (strategic positions) during the measurements.en_US
dc.languageengen_US
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/ssten_US
dc.relation.ispartofSemiconductor Science and Technologyen_US
dc.titleOn the switching behaviour of post-breakdown conduction in ultra-thin SiO 2 filmsen_US
dc.typeArticleen_US
dc.identifier.emailFung, S: sfung@hku.hken_US
dc.identifier.authorityFung, S=rp00695en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1088/0268-1242/16/9/310en_US
dc.identifier.scopuseid_2-s2.0-0035443262en_US
dc.identifier.hkuros64919-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0035443262&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume16en_US
dc.identifier.issue9en_US
dc.identifier.spage793en_US
dc.identifier.epage797en_US
dc.identifier.isiWOS:000170946500013-
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridChen, TP=7405540443en_US
dc.identifier.scopusauthoridTse, MS=7103352646en_US
dc.identifier.scopusauthoridZeng, X=7403248575en_US
dc.identifier.scopusauthoridFung, S=7201970040en_US
dc.identifier.citeulike2997433-
dc.identifier.issnl0268-1242-

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