Study on (√3 × √3) R 30° reconstruction of 6H-SiC(0001) surface by atleed

Abstract

The result on 6H-SiC(0001)-(√3 × √3) R 30° surface obtained by low-energy electron diffraction(LEED) shows that 1/3 monolayer Si atoms were absorbed on T 4 hollow sites and bonded to three Si atoms in the first SiC bilayer with a distance of 0.171nm. The calculation result of ATLEED shows that the ratio of three different surface terminations, distinguished by the stacking fault sequence of SiC bilayers, in the "best-fit structure" obtained by analysis of 10 non-equivalent normal incidence beam sets is S1 : S2 : S3 = 15 : 15 : 70. The values of average R VHT = 0.165 and R P = 0.142 indicate that the surface growth was consistent with the mechanism of step-flow growth corresponding to total energy minimum.