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- Publisher Website: 10.1142/S0218625X03005657
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Article: Structure determination of the 1 × 1 GaN(0001) surface by quantitative low energy electron diffraction
Title | Structure determination of the 1 × 1 GaN(0001) surface by quantitative low energy electron diffraction |
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Authors | |
Keywords | Gallium Nitride Low Energy Electron Diffraction Surface Structure Determination |
Issue Date | 2003 |
Publisher | World Scientific Publishing Co Pte Ltd. The Journal's web site is located at http://www.worldscinet.com/srl/srl.shtml |
Citation | Surface Review And Letters, 2003, v. 10 n. 6, p. 831-836 How to Cite? |
Abstract | A quantitative structural determination of the Ga-polar 1 × 1 (0001) surface of GaN is performed by quantitative low energy electron diffraction (LEED). The global best-fit structure is obtained by a new frozen LEED approach connected to a simulated annealing algorithm. The global minimization frozen (GMF) LEED search finds that the ordered structure consists of 1 ML of Ga adatoms at atop sites above Ga-terminated bilayers. The Ga adatoms are bonded with a Ga-Ga bond length of 2.51 Å. The spacings within surface bilayers show a weak oscillatory trend, with the outmost bilayer thickness expanding to 0.72 Å and the next bilayer thickness contracting to 0.64 Å, compared to the bulk thickness of 0.65 Å. The interlayer spacing between the first and second bilayers is 1.89 Å, while the next interlayer spacing is 1.94 Å, compared to the bulk value of 1.95 Å. These results are compared with data from other theoretical and experimental studies. |
Persistent Identifier | http://hdl.handle.net/10722/174931 |
ISSN | 2021 Impact Factor: 1.240 2020 SCImago Journal Rankings: 0.261 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
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dc.contributor.author | Yu, ZX | en_US |
dc.contributor.author | Tong, SY | en_US |
dc.contributor.author | Xu, S | en_US |
dc.contributor.author | Ma, S | en_US |
dc.contributor.author | Wu, H | en_US |
dc.date.accessioned | 2012-11-26T08:48:13Z | - |
dc.date.available | 2012-11-26T08:48:13Z | - |
dc.date.issued | 2003 | en_US |
dc.identifier.citation | Surface Review And Letters, 2003, v. 10 n. 6, p. 831-836 | en_US |
dc.identifier.issn | 0218-625X | en_US |
dc.identifier.uri | http://hdl.handle.net/10722/174931 | - |
dc.description.abstract | A quantitative structural determination of the Ga-polar 1 × 1 (0001) surface of GaN is performed by quantitative low energy electron diffraction (LEED). The global best-fit structure is obtained by a new frozen LEED approach connected to a simulated annealing algorithm. The global minimization frozen (GMF) LEED search finds that the ordered structure consists of 1 ML of Ga adatoms at atop sites above Ga-terminated bilayers. The Ga adatoms are bonded with a Ga-Ga bond length of 2.51 Å. The spacings within surface bilayers show a weak oscillatory trend, with the outmost bilayer thickness expanding to 0.72 Å and the next bilayer thickness contracting to 0.64 Å, compared to the bulk thickness of 0.65 Å. The interlayer spacing between the first and second bilayers is 1.89 Å, while the next interlayer spacing is 1.94 Å, compared to the bulk value of 1.95 Å. These results are compared with data from other theoretical and experimental studies. | en_US |
dc.language | eng | en_US |
dc.publisher | World Scientific Publishing Co Pte Ltd. The Journal's web site is located at http://www.worldscinet.com/srl/srl.shtml | en_US |
dc.relation.ispartof | Surface Review and Letters | en_US |
dc.subject | Gallium Nitride | en_US |
dc.subject | Low Energy Electron Diffraction | en_US |
dc.subject | Surface Structure Determination | en_US |
dc.title | Structure determination of the 1 × 1 GaN(0001) surface by quantitative low energy electron diffraction | en_US |
dc.type | Article | en_US |
dc.identifier.email | Wu, H: hswu@hkucc.hku.hk | en_US |
dc.identifier.authority | Wu, H=rp00813 | en_US |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.doi | 10.1142/S0218625X03005657 | en_US |
dc.identifier.scopus | eid_2-s2.0-1542515237 | en_US |
dc.identifier.hkuros | 131997 | - |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-1542515237&selection=ref&src=s&origin=recordpage | en_US |
dc.identifier.volume | 10 | en_US |
dc.identifier.issue | 6 | en_US |
dc.identifier.spage | 831 | en_US |
dc.identifier.epage | 836 | en_US |
dc.identifier.isi | WOS:000220312100001 | - |
dc.publisher.place | Singapore | en_US |
dc.identifier.scopusauthorid | Yu, ZX=35254695500 | en_US |
dc.identifier.scopusauthorid | Tong, SY=24512624800 | en_US |
dc.identifier.scopusauthorid | Xu, S=55223149000 | en_US |
dc.identifier.scopusauthorid | Ma, S=7403725465 | en_US |
dc.identifier.scopusauthorid | Wu, H=7405584367 | en_US |
dc.identifier.issnl | 0218-625X | - |