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- Publisher Website: 10.1142/S0218625X04005937
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Article: Structural properties of GaN films grown on the 6H-SiC(0001) (√3 × √3)R30° substrate
Title | Structural properties of GaN films grown on the 6H-SiC(0001) (√3 × √3)R30° substrate |
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Authors | |
Issue Date | 2004 |
Publisher | World Scientific Publishing Co Pte Ltd. The Journal's web site is located at http://www.worldscinet.com/srl/srl.shtml |
Citation | Surface Review And Letters, 2004, v. 11 n. 1, p. 1-6 How to Cite? |
Abstract | Ab initio total energy calculations are performed to determine the interface structure of GaN films grown on the 6H-SiC(0001) (√3 × √3)R30° substrate. The results show that the GaN film is of the wurtzite structure and has the Ga-polarity. It is also shown that stacking mismatch boundaries (SMBs) caused by the coalescence of GaN islands grown on stepped terraces of the 6H-SiC(0001) surface may be removed by stacking faults as the film grows. The types of SMBs on a stepped 6H-SiC(0001) surface are discussed. |
Persistent Identifier | http://hdl.handle.net/10722/174945 |
ISSN | 2023 Impact Factor: 1.2 2023 SCImago Journal Rankings: 0.226 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
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dc.contributor.author | Dai, XQ | en_US |
dc.contributor.author | Wu, HS | en_US |
dc.contributor.author | Xu, SH | en_US |
dc.contributor.author | Xie, MH | en_US |
dc.contributor.author | Tong, SY | en_US |
dc.date.accessioned | 2012-11-26T08:48:18Z | - |
dc.date.available | 2012-11-26T08:48:18Z | - |
dc.date.issued | 2004 | en_US |
dc.identifier.citation | Surface Review And Letters, 2004, v. 11 n. 1, p. 1-6 | en_US |
dc.identifier.issn | 0218-625X | en_US |
dc.identifier.uri | http://hdl.handle.net/10722/174945 | - |
dc.description.abstract | Ab initio total energy calculations are performed to determine the interface structure of GaN films grown on the 6H-SiC(0001) (√3 × √3)R30° substrate. The results show that the GaN film is of the wurtzite structure and has the Ga-polarity. It is also shown that stacking mismatch boundaries (SMBs) caused by the coalescence of GaN islands grown on stepped terraces of the 6H-SiC(0001) surface may be removed by stacking faults as the film grows. The types of SMBs on a stepped 6H-SiC(0001) surface are discussed. | en_US |
dc.language | eng | en_US |
dc.publisher | World Scientific Publishing Co Pte Ltd. The Journal's web site is located at http://www.worldscinet.com/srl/srl.shtml | en_US |
dc.relation.ispartof | Surface Review and Letters | en_US |
dc.title | Structural properties of GaN films grown on the 6H-SiC(0001) (√3 × √3)R30° substrate | en_US |
dc.type | Article | en_US |
dc.identifier.email | Wu, HS: hswu@hkucc.hku.hk | en_US |
dc.identifier.email | Xie, MH: mhxie@hku.hk | en_US |
dc.identifier.authority | Wu, HS=rp00813 | en_US |
dc.identifier.authority | Xie, MH=rp00818 | en_US |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.doi | 10.1142/S0218625X04005937 | en_US |
dc.identifier.scopus | eid_2-s2.0-1942519895 | en_US |
dc.identifier.hkuros | 88913 | - |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-1942519895&selection=ref&src=s&origin=recordpage | en_US |
dc.identifier.volume | 11 | en_US |
dc.identifier.issue | 1 | en_US |
dc.identifier.spage | 1 | en_US |
dc.identifier.epage | 6 | en_US |
dc.identifier.isi | WOS:000220983700001 | - |
dc.publisher.place | Singapore | en_US |
dc.identifier.scopusauthorid | Dai, XQ=55237280400 | en_US |
dc.identifier.scopusauthorid | Wu, HS=7405584367 | en_US |
dc.identifier.scopusauthorid | Xu, SH=36832008600 | en_US |
dc.identifier.scopusauthorid | Xie, MH=7202255416 | en_US |
dc.identifier.scopusauthorid | Tong, SY=24512624800 | en_US |
dc.identifier.issnl | 0218-625X | - |