File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Improved Charge-Trapping Characteristics of BaTiO3 by Zr Doping for Nonvolatile Memory Applications

TitleImproved Charge-Trapping Characteristics of BaTiO3 by Zr Doping for Nonvolatile Memory Applications
Authors
Huang, XSin, JKOLai, PT
KeywordsBaTiO3
charge-trapping layer (CTL)
nonvolatile memory
Zr incorporation
Issue Date2013
Citation
IEEE Electron Device Letters, 2013, v. 34, p. 499-501 How to Cite?
DOI: http://dx.doi.org/10.1109/LED.2013.2244557
Persistent Identifierhttp://hdl.handle.net/10722/191390
ISSN
0741-3106
2021 Impact Factor: 4.816
2020 SCImago Journal Rankings: 1.337
ISI Accession Number ID
WOS:000316813100008

 

DC FieldValueLanguage
dc.contributor.authorHuang, Xen_US
dc.contributor.authorSin, JKOen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2013-10-15T06:55:36Z-
dc.date.available2013-10-15T06:55:36Z-
dc.date.issued2013en_US
dc.identifier.citationIEEE Electron Device Letters, 2013, v. 34, p. 499-501en_US
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10722/191390-
dc.languageengen_US
dc.relation.ispartofIEEE Electron Device Lettersen_US
dc.subjectBaTiO3-
dc.subjectcharge-trapping layer (CTL)-
dc.subjectnonvolatile memory-
dc.subjectZr incorporation-
dc.titleImproved Charge-Trapping Characteristics of BaTiO3 by Zr Doping for Nonvolatile Memory Applicationsen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/LED.2013.2244557-
dc.identifier.scopuseid_2-s2.0-84875669256-
dc.identifier.hkuros226010en_US
dc.identifier.volume34en_US
dc.identifier.spage499en_US
dc.identifier.epage501en_US
dc.identifier.eissn1558-0563-
dc.identifier.isiWOS:000316813100008-
dc.identifier.issnl0741-3106-

Export via OAI-PMH Interface in XML Formats

OR

Export to Other Non-XML Formats