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Article: A low-frequency noise model with carrier generation-recombination process for pentacene organic thin-film transistor

TitleA low-frequency noise model with carrier generation-recombination process for pentacene organic thin-film transistor
Authors
HAN, CQIAN, LLeung, CHChe, CMLai, PT
Issue Date2013
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2013, v. 114 n. 4, article no. 044503, p. 1-6 How to Cite?
DOI: http://dx.doi.org/10.1063/1.4816103
Persistent Identifierhttp://hdl.handle.net/10722/202556
ISSN
0021-8979
2021 Impact Factor: 2.877
2020 SCImago Journal Rankings: 0.699
ISI Accession Number ID
WOS:000322539300097

 

DC FieldValueLanguage
dc.contributor.authorHAN, Cen_US
dc.contributor.authorQIAN, Len_US
dc.contributor.authorLeung, CHen_US
dc.contributor.authorChe, CMen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2014-09-19T08:41:04Z-
dc.date.available2014-09-19T08:41:04Z-
dc.date.issued2013en_US
dc.identifier.citationJournal of Applied Physics, 2013, v. 114 n. 4, article no. 044503, p. 1-6-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10722/202556-
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.rightsCopyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2013, v. 114 n. 4, article no. 044503, p. 1-6 and may be found at https://doi.org/10.1063/1.4816103-
dc.titleA low-frequency noise model with carrier generation-recombination process for pentacene organic thin-film transistoren_US
dc.typeArticleen_US
dc.identifier.emailLeung, CH: chleung@eee.hku.hken_US
dc.identifier.emailChe, CM: cmche@hku.hken_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.authorityLeung, CH=rp00146en_US
dc.identifier.authorityChe, CM=rp00670en_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.4816103-
dc.identifier.scopuseid_2-s2.0-84882300543-
dc.identifier.hkuros236408en_US
dc.identifier.hkuros240488-
dc.identifier.volume114en_US
dc.identifier.issue4-
dc.identifier.spagearticle no. 044503, p. 1-
dc.identifier.epagearticle no. 044503, p. 6-
dc.identifier.isiWOS:000322539300097-
dc.publisher.placeNew York, USAen_US
dc.identifier.issnl0021-8979-

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