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Conference Paper: Evaluation of 200-nm GaN Nanopillar Photonic Crystals

TitleEvaluation of 200-nm GaN Nanopillar Photonic Crystals
Authors
Issue Date2012
Citation
International Workshop on Nitride Semiconductors (IWN 2012), Sapporo, Japan, 14-19 October 2012 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/204037

 

DC FieldValueLanguage
dc.contributor.authorZhang, Xen_US
dc.contributor.authorMa, Zen_US
dc.contributor.authorChoi, HWen_US
dc.date.accessioned2014-09-19T20:02:02Z-
dc.date.available2014-09-19T20:02:02Z-
dc.date.issued2012en_US
dc.identifier.citationInternational Workshop on Nitride Semiconductors (IWN 2012), Sapporo, Japan, 14-19 October 2012en_US
dc.identifier.urihttp://hdl.handle.net/10722/204037-
dc.languageengen_US
dc.relation.ispartofInternational Workshop on Nitride Semiconductors (IWN)en_US
dc.titleEvaluation of 200-nm GaN Nanopillar Photonic Crystalsen_US
dc.typeConference_Paperen_US
dc.identifier.emailMa, Z: malctt@hku.hken_US
dc.identifier.emailChoi, HW: hwchoi@eee.hku.hken_US
dc.identifier.authorityChoi, HW=rp00108en_US
dc.identifier.hkuros236784en_US

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