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- Publisher Website: 10.1364/OE.23.015021
- Scopus: eid_2-s2.0-84960547358
- WOS: WOS:000356902400149
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Article: InGaN light-emitting diode stripes with reduced luminous exitance
Title | InGaN light-emitting diode stripes with reduced luminous exitance |
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Authors | |
Issue Date | 2015 |
Citation | Optics Express, 2015, v. 23, p. 15021-15028 How to Cite? |
Abstract | InGaN light-emitting diodes of stripe geometries have been demonstrated. The elongated geometry facilitates light spreading in the longitudinal direction. The chips are further shaped by laser-micromachining to have partially-inclined sidewalls. The light extraction efficiencies of such 3D chip geometries are enhanced by ~12% (~8% according to ray-trace simulations), leading to a reduction of junction temperatures. The effective emission area is also increased four times compared to a cubic chip. The stripe LEDs are thus more efficient emitters with reduced luminous exitance, making them more suitable for a wide range of lighting applications. |
Persistent Identifier | http://hdl.handle.net/10722/210732 |
ISI Accession Number ID | |
Grants |
DC Field | Value | Language |
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dc.contributor.author | Cheung, WS | - |
dc.contributor.author | Cheung, YF | - |
dc.contributor.author | Chen, H | - |
dc.contributor.author | Hui, SYR | - |
dc.contributor.author | Waffenschmidt, E. | - |
dc.contributor.author | Choi, HW | - |
dc.date.accessioned | 2015-06-23T05:48:49Z | - |
dc.date.available | 2015-06-23T05:48:49Z | - |
dc.date.issued | 2015 | - |
dc.identifier.citation | Optics Express, 2015, v. 23, p. 15021-15028 | - |
dc.identifier.uri | http://hdl.handle.net/10722/210732 | - |
dc.description.abstract | InGaN light-emitting diodes of stripe geometries have been demonstrated. The elongated geometry facilitates light spreading in the longitudinal direction. The chips are further shaped by laser-micromachining to have partially-inclined sidewalls. The light extraction efficiencies of such 3D chip geometries are enhanced by ~12% (~8% according to ray-trace simulations), leading to a reduction of junction temperatures. The effective emission area is also increased four times compared to a cubic chip. The stripe LEDs are thus more efficient emitters with reduced luminous exitance, making them more suitable for a wide range of lighting applications. | - |
dc.language | eng | - |
dc.relation.ispartof | Optics Express | - |
dc.title | InGaN light-emitting diode stripes with reduced luminous exitance | - |
dc.type | Article | - |
dc.identifier.email | Cheung, YF: yukfaira@hku.hk | - |
dc.identifier.email | Choi, HW: hwchoi@hku.hk | - |
dc.identifier.email | Hui, SYR: ronhui@eee.hku.hk | - |
dc.identifier.email | Chen, H: htchen@eee.hku.hk | - |
dc.identifier.authority | Choi, HW=rp00108 | - |
dc.identifier.authority | Hui, SYR=rp01510 | - |
dc.identifier.doi | 10.1364/OE.23.015021 | - |
dc.identifier.scopus | eid_2-s2.0-84960547358 | - |
dc.identifier.hkuros | 244152 | - |
dc.identifier.hkuros | 263399 | - |
dc.identifier.volume | 23 | - |
dc.identifier.spage | 15021 | - |
dc.identifier.epage | 15028 | - |
dc.identifier.eissn | 1094-4087 | - |
dc.identifier.isi | WOS:000356902400149 | - |
dc.relation.project | Sustainable Lighting Technology: From Devices to Systems | - |
dc.identifier.issnl | 1094-4087 | - |