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Conference Paper: Enhancing the optical gain and lowering the lasing threshold in ZnO/ZnMgO quantum well structures
| Title | Enhancing the optical gain and lowering the lasing threshold in ZnO/ZnMgO quantum well structures |
|---|---|
| Authors | |
| Issue Date | 2014 |
| Publisher | Materials Research Society. |
| Citation | The 2014 Spring Meeting and Exhibit of the Materials Research Society (MRS), San Francisco, CA., 21-25 April 2014. How to Cite? |
| Abstract | The ZnO/Zn0.85Mg0.15O asymmetric double quantum well (ADQW) and multiple quantum well (MQW) were fabricated with the method of plasma assisted molecular epitaxy on c-plane sapphire [1,2]. The widths of the narrow well (NW) and the wide well (WW) of the ADQW are chosen to fascinate rapid LO phonon-assisted carrier tunneling from NW to WW. The room-temperature optical properties and optical pumped lasing have been studied. As compared to the MQW sample, the lasing threshold of the ADQW sample is reduced by a factor of ~ 3 times to 6.0 kW/cm2. Optical gains measured through the variable striple-length measurement reveals that the gain of the ADQW is enhanced as compared to that of the MQW. The low-threshold of the ADQW sample is proposed to be due to the exciton density enhancement at the WW. This result suggests that ZnMgO ADQWs is a promising structure for realizing of ultralow-threshold exciton-based laser device. |
| Description | Symposium J: Physics of Oxide Thin Films and Heterostructures (24 April 2014) J8 - Poster Session 2: no. J8:12 |
| Persistent Identifier | http://hdl.handle.net/10722/211392 |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Su, S | - |
| dc.contributor.author | Ling, CC | - |
| dc.date.accessioned | 2015-07-10T06:16:06Z | - |
| dc.date.available | 2015-07-10T06:16:06Z | - |
| dc.date.issued | 2014 | - |
| dc.identifier.citation | The 2014 Spring Meeting and Exhibit of the Materials Research Society (MRS), San Francisco, CA., 21-25 April 2014. | - |
| dc.identifier.uri | http://hdl.handle.net/10722/211392 | - |
| dc.description | Symposium J: Physics of Oxide Thin Films and Heterostructures (24 April 2014) | - |
| dc.description | J8 - Poster Session 2: no. J8:12 | - |
| dc.description.abstract | The ZnO/Zn0.85Mg0.15O asymmetric double quantum well (ADQW) and multiple quantum well (MQW) were fabricated with the method of plasma assisted molecular epitaxy on c-plane sapphire [1,2]. The widths of the narrow well (NW) and the wide well (WW) of the ADQW are chosen to fascinate rapid LO phonon-assisted carrier tunneling from NW to WW. The room-temperature optical properties and optical pumped lasing have been studied. As compared to the MQW sample, the lasing threshold of the ADQW sample is reduced by a factor of ~ 3 times to 6.0 kW/cm2. Optical gains measured through the variable striple-length measurement reveals that the gain of the ADQW is enhanced as compared to that of the MQW. The low-threshold of the ADQW sample is proposed to be due to the exciton density enhancement at the WW. This result suggests that ZnMgO ADQWs is a promising structure for realizing of ultralow-threshold exciton-based laser device. | - |
| dc.language | eng | - |
| dc.publisher | Materials Research Society. | - |
| dc.relation.ispartof | Spring Meeting and Exhibit of the Materials Research Society (MRS) | - |
| dc.title | Enhancing the optical gain and lowering the lasing threshold in ZnO/ZnMgO quantum well structures | - |
| dc.type | Conference_Paper | - |
| dc.identifier.email | Ling, CC: ccling@hkucc.hku.hk | - |
| dc.identifier.authority | Ling, CC=rp00747 | - |
| dc.description.nature | link_to_OA_fulltext | - |
| dc.identifier.hkuros | 244835 | - |