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- Publisher Website: 10.1109/TNANO.2010.2053216
- Scopus: eid_2-s2.0-77956629102
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Conference Paper: Development of infrared detectors using single carbon-nanotube-based field-effect transistors
Title | Development of infrared detectors using single carbon-nanotube-based field-effect transistors |
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Authors | |
Keywords | Carbon nanotube (CNT) Optoelectronics IR detector Field-effect transistor |
Issue Date | 2010 |
Citation | IEEE Transactions on Nanotechnology, 2010, v. 9, n. 5, p. 582-589 How to Cite? |
Abstract | Carbon nanotube is a promising material to fabricate high-performance nanoscale-optoelectronic devices owing to its unique 1-D structure. In particular, different types of carbonnanotube- infrared detectors have been developed. However, most previous reported carbon-nanotube-IR detectors showed poor device characteristics due to limited understanding of their working principles. In this paper, three types of IR detectors were fabricated using carbon-nanotube field effect transistors (CNTFETs) to investigate their performance: 1) symmetric Au-CNT-Au CNTFET IR detector; 2) symmetric Ag-CNT-Ag CNTFET IR detector; and 3) asymmetric Ag-CNT-Au CNTFET IR detector. The theoretical analyses and experimental results have shown that the IR detector using an individual single-wall carbon nanotube (SWCNT), with asymmetric Ag-CNT-Au CNTFET structure, can suppress dark current and increase photocurrent by electrostatic doping. As a result, an open-circuit voltage of 0.45 V under IR illumination was generated, which is the highest value reported to date for an individual SWCNT-based photodetector. The results reported in this paper have demonstrated that the CNTFET can be used to develop high-performance IR sensors. |
Persistent Identifier | http://hdl.handle.net/10722/213122 |
ISSN | 2023 Impact Factor: 2.1 2023 SCImago Journal Rankings: 0.435 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Chen, Hongzhi | - |
dc.contributor.author | Xi, Ning | - |
dc.contributor.author | Lai, King W C | - |
dc.contributor.author | Fung, Carmen K M | - |
dc.contributor.author | Yans, Ruiguo | - |
dc.date.accessioned | 2015-07-28T04:06:12Z | - |
dc.date.available | 2015-07-28T04:06:12Z | - |
dc.date.issued | 2010 | - |
dc.identifier.citation | IEEE Transactions on Nanotechnology, 2010, v. 9, n. 5, p. 582-589 | - |
dc.identifier.issn | 1536-125X | - |
dc.identifier.uri | http://hdl.handle.net/10722/213122 | - |
dc.description.abstract | Carbon nanotube is a promising material to fabricate high-performance nanoscale-optoelectronic devices owing to its unique 1-D structure. In particular, different types of carbonnanotube- infrared detectors have been developed. However, most previous reported carbon-nanotube-IR detectors showed poor device characteristics due to limited understanding of their working principles. In this paper, three types of IR detectors were fabricated using carbon-nanotube field effect transistors (CNTFETs) to investigate their performance: 1) symmetric Au-CNT-Au CNTFET IR detector; 2) symmetric Ag-CNT-Ag CNTFET IR detector; and 3) asymmetric Ag-CNT-Au CNTFET IR detector. The theoretical analyses and experimental results have shown that the IR detector using an individual single-wall carbon nanotube (SWCNT), with asymmetric Ag-CNT-Au CNTFET structure, can suppress dark current and increase photocurrent by electrostatic doping. As a result, an open-circuit voltage of 0.45 V under IR illumination was generated, which is the highest value reported to date for an individual SWCNT-based photodetector. The results reported in this paper have demonstrated that the CNTFET can be used to develop high-performance IR sensors. | - |
dc.language | eng | - |
dc.relation.ispartof | IEEE Transactions on Nanotechnology | - |
dc.subject | Carbon nanotube (CNT) | - |
dc.subject | Optoelectronics | - |
dc.subject | IR detector | - |
dc.subject | Field-effect transistor | - |
dc.title | Development of infrared detectors using single carbon-nanotube-based field-effect transistors | - |
dc.type | Conference_Paper | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1109/TNANO.2010.2053216 | - |
dc.identifier.scopus | eid_2-s2.0-77956629102 | - |
dc.identifier.volume | 9 | - |
dc.identifier.issue | 5 | - |
dc.identifier.spage | 582 | - |
dc.identifier.epage | 589 | - |
dc.identifier.isi | WOS:000283249400010 | - |
dc.identifier.issnl | 1536-125X | - |