File Download
Links for fulltext
(May Require Subscription)
- Publisher Website: 10.1002/pssr.201409261
- Scopus: eid_2-s2.0-84939266545
- WOS: WOS:000344006800012
- Find via
Supplementary
- Citations:
- Appears in Collections:
Article: High-mobility pentacene OTFT with TaLaO gate dielectric passivated by fluorine plasma
Title | High-mobility pentacene OTFT with TaLaO gate dielectric passivated by fluorine plasma |
---|---|
Authors | |
Keywords | Low-frequency noise Organic semiconductors Passivation Plasma treatment TaLaO Thin-film transistors |
Issue Date | 2014 |
Publisher | Wiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1862-6270 |
Citation | Physica Status Solidi - Rapid Research Letters, 2014, v. 8 n. 10, p. 866-870 How to Cite? |
Abstract | Pentacene thin-film transistor with high-κ TaLaO as gate dielectric has been fabricated and shows a carrier mobility of 0.73 cm2/V s, much higher than that based on pure La2O3 (0.43 cm2/V s) due to the smoother surface of the TaLaO film and thus larger pentacene islands grown on it in the initial stage. Moreover, among various times for fluorine-plasma treatment on the TaLaO gate dielectric, 100 seconds result in the highest carrier mobility of 1.12 cm2/V s due to (1) smoothest oxide surface achieved by fluorine passivation of oxide traps, as measured by AFM and supported by smallest sub-threshold swing and lowest low-frequency noise; (2) the largest pentacene grains grown on the smoothest oxide surface, as demonstrated by AFM. Pentacene islands on on TaLaO or La2O3 gate dielectric with different plasma treatment times. |
Persistent Identifier | http://hdl.handle.net/10722/215133 |
ISSN | 2023 Impact Factor: 2.5 2023 SCImago Journal Rankings: 0.655 |
ISI Accession Number ID |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Han, CY | - |
dc.contributor.author | Tang, WM | - |
dc.contributor.author | Leung, CH | - |
dc.contributor.author | Che, CM | - |
dc.contributor.author | Lai, PT | - |
dc.date.accessioned | 2015-08-21T13:15:19Z | - |
dc.date.available | 2015-08-21T13:15:19Z | - |
dc.date.issued | 2014 | - |
dc.identifier.citation | Physica Status Solidi - Rapid Research Letters, 2014, v. 8 n. 10, p. 866-870 | - |
dc.identifier.issn | 1862-6254 | - |
dc.identifier.uri | http://hdl.handle.net/10722/215133 | - |
dc.description.abstract | Pentacene thin-film transistor with high-κ TaLaO as gate dielectric has been fabricated and shows a carrier mobility of 0.73 cm2/V s, much higher than that based on pure La2O3 (0.43 cm2/V s) due to the smoother surface of the TaLaO film and thus larger pentacene islands grown on it in the initial stage. Moreover, among various times for fluorine-plasma treatment on the TaLaO gate dielectric, 100 seconds result in the highest carrier mobility of 1.12 cm2/V s due to (1) smoothest oxide surface achieved by fluorine passivation of oxide traps, as measured by AFM and supported by smallest sub-threshold swing and lowest low-frequency noise; (2) the largest pentacene grains grown on the smoothest oxide surface, as demonstrated by AFM. Pentacene islands on on TaLaO or La2O3 gate dielectric with different plasma treatment times. | - |
dc.language | eng | - |
dc.publisher | Wiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1862-6270 | - |
dc.relation.ispartof | Physica Status Solidi - Rapid Research Letters | - |
dc.rights | This is the accepted version of the following article: Physica Status Solidi - Rapid Research Letters, 2014, v. 8 n. 10, p. 866-870, which has been published in final form at http://onlinelibrary.wiley.com/doi/10.1002/pssr.201409261/abstract | - |
dc.subject | Low-frequency noise | - |
dc.subject | Organic semiconductors | - |
dc.subject | Passivation | - |
dc.subject | Plasma treatment | - |
dc.subject | TaLaO | - |
dc.subject | Thin-film transistors | - |
dc.title | High-mobility pentacene OTFT with TaLaO gate dielectric passivated by fluorine plasma | - |
dc.type | Article | - |
dc.identifier.email | Leung, CH: hreelch@HKUCC.hku.hk | - |
dc.identifier.email | Che, CM: cmche@hku.hk | - |
dc.identifier.email | Lai, PT: laip@eee.hku.hk | - |
dc.identifier.authority | Leung, CH=rp00146 | - |
dc.identifier.authority | Che, CM=rp00670 | - |
dc.identifier.authority | Lai, PT=rp00130 | - |
dc.description.nature | postprint | - |
dc.identifier.doi | 10.1002/pssr.201409261 | - |
dc.identifier.scopus | eid_2-s2.0-84939266545 | - |
dc.identifier.hkuros | 246793 | - |
dc.identifier.volume | 8 | - |
dc.identifier.issue | 10 | - |
dc.identifier.spage | 866 | - |
dc.identifier.epage | 870 | - |
dc.identifier.isi | WOS:000344006800012 | - |
dc.publisher.place | Germany | - |
dc.identifier.issnl | 1862-6254 | - |