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- Publisher Website: 10.1002/adma.201405391
- Scopus: eid_2-s2.0-84928919870
- WOS: WOS:000354487100015
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Article: Post-treatment-Free Solution-Processed Non-stoichiometric NiOx Nanoparticles for Efficient Hole-Transport Layers of Organic Optoelectronic Devices
Title | Post-treatment-Free Solution-Processed Non-stoichiometric NiOx Nanoparticles for Efficient Hole-Transport Layers of Organic Optoelectronic Devices |
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Authors | |
Keywords | hole-transport layers nickel oxide organic optoelectronic devices post-treatment-free transition metal oxides |
Issue Date | 2015 |
Citation | Advanced Materials, 2015, v. 27, p. 2930-2937 How to Cite? |
Abstract | High-quality non-stoichiometric NiOx nanoparticles are synthesized by a facile chemical precipitation method. The NiOx film can function as an effective hole-transport layer (HTL) without any post-treatments, while offering wide temperature applicability from room temperature to 150 °C. A high efficiency of 9.16% is achieved in organic solar cells using the NiOx HTL. A better performance in a NiOx-based organic light-emitting diode is observed, compared with a device using PEDOT:PSS. |
Persistent Identifier | http://hdl.handle.net/10722/216953 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Jiang, F | - |
dc.contributor.author | Choy, WCH | - |
dc.contributor.author | Li, X | - |
dc.contributor.author | Zhang, D | - |
dc.contributor.author | Cheng, J | - |
dc.date.accessioned | 2015-09-18T05:44:00Z | - |
dc.date.available | 2015-09-18T05:44:00Z | - |
dc.date.issued | 2015 | - |
dc.identifier.citation | Advanced Materials, 2015, v. 27, p. 2930-2937 | - |
dc.identifier.uri | http://hdl.handle.net/10722/216953 | - |
dc.description.abstract | High-quality non-stoichiometric NiOx nanoparticles are synthesized by a facile chemical precipitation method. The NiOx film can function as an effective hole-transport layer (HTL) without any post-treatments, while offering wide temperature applicability from room temperature to 150 °C. A high efficiency of 9.16% is achieved in organic solar cells using the NiOx HTL. A better performance in a NiOx-based organic light-emitting diode is observed, compared with a device using PEDOT:PSS. | - |
dc.language | eng | - |
dc.relation.ispartof | Advanced Materials | - |
dc.subject | hole-transport layers | - |
dc.subject | nickel oxide | - |
dc.subject | organic optoelectronic devices | - |
dc.subject | post-treatment-free | - |
dc.subject | transition metal oxides | - |
dc.title | Post-treatment-Free Solution-Processed Non-stoichiometric NiOx Nanoparticles for Efficient Hole-Transport Layers of Organic Optoelectronic Devices | - |
dc.type | Article | - |
dc.identifier.email | Choy, WCH: chchoy@eee.hku.hk | - |
dc.identifier.email | Zhang, D: zhangdi@eee.hku.hk | - |
dc.identifier.email | Cheng, J: jqcheng@HKUCC-COM.hku.hk | - |
dc.identifier.authority | Choy, WCH=rp00218 | - |
dc.identifier.doi | 10.1002/adma.201405391 | - |
dc.identifier.scopus | eid_2-s2.0-84928919870 | - |
dc.identifier.hkuros | 250873 | - |
dc.identifier.volume | 27 | - |
dc.identifier.spage | 2930 | - |
dc.identifier.epage | 2937 | - |
dc.identifier.isi | WOS:000354487100015 | - |