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Article: Improved Performance of Amorphous InGaZnO Thin-Film Transistor with Ta2O5 Gate Dielectric by using La Incorporation

TitleImproved Performance of Amorphous InGaZnO Thin-Film Transistor with Ta2O5 Gate Dielectric by using La Incorporation
Authors
KeywordsAmorphous InGaZnO (a-IGZO)
carrier mobility
high-k
subthreshold swing
Ta2O5
TaLaO
thin-film transistor (TFT)
Issue Date2014
Citation
IEEE Transactions on Device and Materials Reliability, 2014, v. 14, p. 1056-1060 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/217027
ISSN
2020 Impact Factor: 1.761
2020 SCImago Journal Rankings: 0.384
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorQian, LX-
dc.contributor.authorLiu, XZ-
dc.contributor.authorHan, CY-
dc.contributor.authorLai, PT-
dc.date.accessioned2015-09-18T05:46:26Z-
dc.date.available2015-09-18T05:46:26Z-
dc.date.issued2014-
dc.identifier.citationIEEE Transactions on Device and Materials Reliability, 2014, v. 14, p. 1056-1060-
dc.identifier.issn1530-4388-
dc.identifier.urihttp://hdl.handle.net/10722/217027-
dc.languageeng-
dc.relation.ispartofIEEE Transactions on Device and Materials Reliability-
dc.subjectAmorphous InGaZnO (a-IGZO)-
dc.subjectcarrier mobility-
dc.subjecthigh-k-
dc.subjectsubthreshold swing-
dc.subjectTa2O5-
dc.subjectTaLaO-
dc.subjectthin-film transistor (TFT)-
dc.titleImproved Performance of Amorphous InGaZnO Thin-Film Transistor with Ta2O5 Gate Dielectric by using La Incorporation-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/TDMR.2014.2365702-
dc.identifier.scopuseid_2-s2.0-84915803663-
dc.identifier.hkuros254200-
dc.identifier.volume14-
dc.identifier.spage1056-
dc.identifier.epage1060-
dc.identifier.eissn1558-2574-
dc.identifier.isiWOS:000345984600017-
dc.identifier.issnl1530-4388-

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