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Article: Improved interfacial and electrical properties of Ge-based metal-oxide-semiconductor capacitor with LaTaON passivation layer

TitleImproved interfacial and electrical properties of Ge-based metal-oxide-semiconductor capacitor with LaTaON passivation layer
Authors
Ji, FENGXu, JHuang, YLiu, LLai, PT
KeywordsGe metal-oxide-semiconductor (Ge MOS)
high-k dielectric
interface properties
LaTaON
passivation layer
Issue Date2014
PublisherIEEE.
Citation
IEEE Transactions on Electron Devices, 2014, v. 61 n. 11, p. 3608-3612 How to Cite?
DOI: http://dx.doi.org/10.1109/TED.2014.2356597
Persistent Identifierhttp://hdl.handle.net/10722/218747
ISSN
0018-9383
2021 Impact Factor: 3.221
2020 SCImago Journal Rankings: 0.828
ISI Accession Number ID
WOS:000344544200005

 

DC FieldValueLanguage
dc.contributor.authorJi, FENG-
dc.contributor.authorXu, J-
dc.contributor.authorHuang, Y-
dc.contributor.authorLiu, L-
dc.contributor.authorLai, PT-
dc.date.accessioned2015-09-18T06:52:17Z-
dc.date.available2015-09-18T06:52:17Z-
dc.date.issued2014-
dc.identifier.citationIEEE Transactions on Electron Devices, 2014, v. 61 n. 11, p. 3608-3612-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10722/218747-
dc.languageeng-
dc.publisherIEEE.-
dc.relation.ispartofIEEE Transactions on Electron Devices-
dc.subjectGe metal-oxide-semiconductor (Ge MOS)-
dc.subjecthigh-k dielectric-
dc.subjectinterface properties-
dc.subjectLaTaON-
dc.subjectpassivation layer-
dc.titleImproved interfacial and electrical properties of Ge-based metal-oxide-semiconductor capacitor with LaTaON passivation layer-
dc.typeArticle-
dc.identifier.emailLiu, L: liulu@hku.hk-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityXu, J=rp00197-
dc.identifier.authorityLai, PT=rp00130-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/TED.2014.2356597-
dc.identifier.scopuseid_2-s2.0-84908461721-
dc.identifier.hkuros253930-
dc.identifier.volume61-
dc.identifier.issue11-
dc.identifier.spage3608-
dc.identifier.epage3612-
dc.identifier.eissn1557-9646-
dc.identifier.isiWOS:000344544200005-
dc.identifier.issnl0018-9383-

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