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- Publisher Website: 10.1209/0295-5075/100/57003
- Scopus: eid_2-s2.0-84871282952
- WOS: WOS:000312541700017
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Article: Photocarrier injection and photo-resistance in SrTiO3−δ/GaAs p-n junctions
Title | Photocarrier injection and photo-resistance in SrTiO3−δ/GaAs p-n junctions |
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Authors | |
Issue Date | 2012 |
Publisher | Institute of Physics Publishing Ltd. The Journal's web site is located at http://iopscience.iop.org/0295-5075 |
Citation | EPL (Europhysics Letters), 2012, v. 100 n. 5, p. 57003:1-4 How to Cite? |
Abstract | Heterojunctions composed of n-type oxygen-deficient SrTiO3−δ and p-type GaAs were fabricated using pulsed laser deposition method. The good crystallinity of SrTiO3−δ was confirmed by X-ray diffraction, reflection high-energy electron diffraction, and transmission electron microscopy. These heterojunctions exhibited excellent rectifying behavior from 40 K to room temperature. The photocarrier injection effect and a large photo-resistance were observed in a wide temperature range. The photo-resistance is nearly 100% at low temperatures and ~40% at room temperature under −0.5 V bias. Strong dependences on both temperature and bias voltage were found as well, which might be understood by considering the band structure of the formed p-n junction. |
Persistent Identifier | http://hdl.handle.net/10722/225569 |
ISSN | 2023 Impact Factor: 1.8 2023 SCImago Journal Rankings: 0.498 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Wu, ZP | - |
dc.contributor.author | Gao, J | - |
dc.date.accessioned | 2016-05-20T02:02:10Z | - |
dc.date.available | 2016-05-20T02:02:10Z | - |
dc.date.issued | 2012 | - |
dc.identifier.citation | EPL (Europhysics Letters), 2012, v. 100 n. 5, p. 57003:1-4 | - |
dc.identifier.issn | 0295-5075 | - |
dc.identifier.uri | http://hdl.handle.net/10722/225569 | - |
dc.description.abstract | Heterojunctions composed of n-type oxygen-deficient SrTiO3−δ and p-type GaAs were fabricated using pulsed laser deposition method. The good crystallinity of SrTiO3−δ was confirmed by X-ray diffraction, reflection high-energy electron diffraction, and transmission electron microscopy. These heterojunctions exhibited excellent rectifying behavior from 40 K to room temperature. The photocarrier injection effect and a large photo-resistance were observed in a wide temperature range. The photo-resistance is nearly 100% at low temperatures and ~40% at room temperature under −0.5 V bias. Strong dependences on both temperature and bias voltage were found as well, which might be understood by considering the band structure of the formed p-n junction. | - |
dc.language | eng | - |
dc.publisher | Institute of Physics Publishing Ltd. The Journal's web site is located at http://iopscience.iop.org/0295-5075 | - |
dc.relation.ispartof | EPL (Europhysics Letters) | - |
dc.rights | EPL (Europhysics Letters). Copyright © Institute of Physics Publishing Ltd. | - |
dc.title | Photocarrier injection and photo-resistance in SrTiO3−δ/GaAs p-n junctions | - |
dc.type | Article | - |
dc.identifier.email | Gao, J: jugao@hku.hk | - |
dc.identifier.authority | Gao, J=rp00699 | - |
dc.identifier.doi | 10.1209/0295-5075/100/57003 | - |
dc.identifier.scopus | eid_2-s2.0-84871282952 | - |
dc.identifier.hkuros | 213488 | - |
dc.identifier.volume | 100 | - |
dc.identifier.issue | 5 | - |
dc.identifier.spage | 57003:1 | - |
dc.identifier.epage | 57003:4 | - |
dc.identifier.isi | WOS:000312541700017 | - |
dc.publisher.place | United Kingdom | - |
dc.identifier.issnl | 0295-5075 | - |