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Conference Paper: Optical characteristics of GAN/SI micro-pixel light-emitting diode arrays
| Title | Optical characteristics of GAN/SI micro-pixel light-emitting diode arrays |
|---|---|
| Authors | |
| Issue Date | 2015 |
| Citation | The 11th International Conference on Nitride Semiconductors (ICNS-11), Beijing China, 30 August-4 September 2015. How to Cite? |
| Abstract | Two-dimensional arrays of emissive micro-light-emitting diodes (μ-LEDS) have been developed for a variety of applications such as high resolution micro-displays, maskless photo-lithography and multichannel visible-light optical communications amongst others. μ-LEDs have traditionally been
fabricated on InGaN LED wafers grown on transparent sapphire substrates, and have suffered from optical crosstalk issues. When a single pixel is addressed, adjacent pixels and regions appear
illuminated simultaneously. Such problems could result in functional failure in high-density μ-LED
applications, including reduced resolution of micro-display and decreased signal-to-noise ratio in ... |
| Persistent Identifier | http://hdl.handle.net/10722/226473 |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Cheung, WS | - |
| dc.contributor.author | Li, KH | - |
| dc.contributor.author | Tang, CW | - |
| dc.contributor.author | Zhao, C | - |
| dc.contributor.author | Lau, KM | - |
| dc.contributor.author | Choi, HW | - |
| dc.date.accessioned | 2016-06-17T07:44:22Z | - |
| dc.date.available | 2016-06-17T07:44:22Z | - |
| dc.date.issued | 2015 | - |
| dc.identifier.citation | The 11th International Conference on Nitride Semiconductors (ICNS-11), Beijing China, 30 August-4 September 2015. | - |
| dc.identifier.uri | http://hdl.handle.net/10722/226473 | - |
| dc.description.abstract | Two-dimensional arrays of emissive micro-light-emitting diodes (μ-LEDS) have been developed for a variety of applications such as high resolution micro-displays, maskless photo-lithography and multichannel visible-light optical communications amongst others. μ-LEDs have traditionally been fabricated on InGaN LED wafers grown on transparent sapphire substrates, and have suffered from optical crosstalk issues. When a single pixel is addressed, adjacent pixels and regions appear illuminated simultaneously. Such problems could result in functional failure in high-density μ-LED applications, including reduced resolution of micro-display and decreased signal-to-noise ratio in ... | - |
| dc.language | eng | - |
| dc.relation.ispartof | International Conference on Nitride Semiconductors, ICNS-11 | - |
| dc.title | Optical characteristics of GAN/SI micro-pixel light-emitting diode arrays | - |
| dc.type | Conference_Paper | - |
| dc.identifier.email | Li, KH: khei@eee.hku.hk | - |
| dc.identifier.email | Choi, HW: hwchoi@hku.hk | - |
| dc.identifier.authority | Li, KH=rp02142 | - |
| dc.identifier.authority | Choi, HW=rp00108 | - |
| dc.description.nature | postprint | - |
| dc.identifier.hkuros | 258478 | - |