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Article: Influences of Remote Coulomb and Interface-Roughness Scatterings on Electron Mobility of InGaAs nMOSFET With High-k Stacked Gate Dielectric

TitleInfluences of Remote Coulomb and Interface-Roughness Scatterings on Electron Mobility of InGaAs <italic> n</italic>MOSFET With High-<italic>k</italic> Stacked Gate Dielectric
Authors
Wang, LXu, JLiu, LHuang, YLu, HLai, PTTang, WM
Keywordseffective electron mobility
high-k dielectric
InGaAs MOSFETs
remote Coulomb scattering
remote interfaceroughness scattering
Issue Date2015
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=7729
Citation
IEEE Transactions on Nanotechnology, 2015, v. 14 n. 5, p. 854-861 How to Cite?
DOI: http://dx.doi.org/10.1109/TNANO.2015.2451134
Persistent Identifierhttp://hdl.handle.net/10722/234053
ISSN
1536-125X
2021 Impact Factor: 2.967
2020 SCImago Journal Rankings: 0.574
ISI Accession Number ID
WOS:000364504200011

 

DC FieldValueLanguage
dc.contributor.authorWang, L-
dc.contributor.authorXu, J-
dc.contributor.authorLiu, L-
dc.contributor.authorHuang, Y-
dc.contributor.authorLu, H-
dc.contributor.authorLai, PT-
dc.contributor.authorTang, WM-
dc.date.accessioned2016-10-14T06:58:45Z-
dc.date.available2016-10-14T06:58:45Z-
dc.date.issued2015-
dc.identifier.citationIEEE Transactions on Nanotechnology, 2015, v. 14 n. 5, p. 854-861-
dc.identifier.issn1536-125X-
dc.identifier.urihttp://hdl.handle.net/10722/234053-
dc.languageeng-
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=7729-
dc.relation.ispartofIEEE Transactions on Nanotechnology-
dc.rightsIEEE Transactions on Nanotechnology. Copyright © IEEE.-
dc.rights©2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.-
dc.subjecteffective electron mobility-
dc.subjecthigh-k dielectric-
dc.subjectInGaAs MOSFETs-
dc.subjectremote Coulomb scattering-
dc.subjectremote interfaceroughness scattering-
dc.titleInfluences of Remote Coulomb and Interface-Roughness Scatterings on Electron Mobility of InGaAs <italic> n</italic>MOSFET With High-<italic>k</italic> Stacked Gate Dielectric-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityXu, J=rp00197-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.1109/TNANO.2015.2451134-
dc.identifier.scopuseid_2-s2.0-84960498451-
dc.identifier.hkuros267823-
dc.identifier.volume14-
dc.identifier.issue5-
dc.identifier.spage854-
dc.identifier.epage861-
dc.identifier.isiWOS:000364504200011-
dc.publisher.placeUnited States-
dc.identifier.issnl1536-125X-

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