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  Patent History
  • Application
    US 12/4831300 2015-08-20
  • Granted
    US 20160233269 2016-08-11

granted patent: FLEXIBLE GAN LIGHT-EMITTING DIODES

TitleFLEXIBLE GAN LIGHT-EMITTING DIODES
Granted PatentUS 20160233269
Granted Date2016-08-11
Priority Date2015-08-20 US 12/4831300
2014-08-21 US 12/2040253P
Inventors
Issue Date2016
Citation
US Patent US 20160233269. Washington, DC: US Patent and Trademark Office (USPTO), 2016 How to Cite?
AbstractMethods of fabricating flexible, free-standing LED structures are provided. An LED structure can be formed on a sapphire substrate, and the surface of the LED structure can then be coated with epoxy and attached to a rigid supporting substrate. A laser lift-off process can be performed using an ultraviolent beam from a high-power pulsed-mode laser and a shadow mask, causing at least a portion of the LED structure to separate from the sapphire substrate. The structure can then be immersed in an acetone bath to dissolve the epoxy and separate the structure from the supporting substrate.
Persistent Identifierhttp://hdl.handle.net/10722/237294

 

DC FieldValueLanguage
dc.date.accessioned2016-12-29T01:51:02Z-
dc.date.available2016-12-29T01:51:02Z-
dc.date.issued2016-
dc.identifier.citationUS Patent US 20160233269. Washington, DC: US Patent and Trademark Office (USPTO), 2016-
dc.identifier.urihttp://hdl.handle.net/10722/237294-
dc.description.abstractMethods of fabricating flexible, free-standing LED structures are provided. An LED structure can be formed on a sapphire substrate, and the surface of the LED structure can then be coated with epoxy and attached to a rigid supporting substrate. A laser lift-off process can be performed using an ultraviolent beam from a high-power pulsed-mode laser and a shadow mask, causing at least a portion of the LED structure to separate from the sapphire substrate. The structure can then be immersed in an acetone bath to dissolve the epoxy and separate the structure from the supporting substrate.-
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.titleFLEXIBLE GAN LIGHT-EMITTING DIODES-
dc.typePatent-
dc.identifier.authorityChoi Hoi Wai=rp00108-
dc.identifier.authorityLi Kwai Hei=rp02142-
dc.description.naturepublished_or_final_version-
dc.contributor.inventorChoi Hoi Wai-
dc.contributor.inventorLi Kwai Hei-
dc.contributor.inventorCheung Yuk Fai-
patents.identifier.applicationUS 12/4831300-
patents.identifier.grantedUS 20160233269-
patents.description.assigneeTHE UNIV OF HONG KONG [CN]-
patents.description.countryUnited States of America-
patents.date.granted2016-08-11-
patents.identifier.hkutechidEEE-2014-00539-1-
patents.date.application2015-08-20-
patents.date.priority2015-08-20 US 12/4831300-
patents.date.priority2014-08-21 US 12/2040253P-
patents.description.ccus-
patents.description.kindA1-
patents.typePatent_granted-

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