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Article: β-Ga2O3 solar-blind deep-ultraviolet photodetector based on a four-terminal structure with or without Zener diodes

Titleβ-Ga2O3 solar-blind deep-ultraviolet photodetector based on a four-terminal structure with or without Zener diodes
Authors
Issue Date2016
PublisherAmerican Institute of Physics. The Journal's web site is located at http://aipadvances.aip.org/
Citation
AIP Advances, 2016, v. 6 n. 4, article no. 045009 How to Cite?
AbstractA four-terminal photodetector was fabricated on the (2⎯⎯⎯012¯01)-dominant β-Ga2O3 thin film which was deposited in a plasma-assisted molecular beam epitaxy system. The suitability of this film for solar-blind DUV detection was proved by its transmission spectra. Moreover, the device operating in a specific voltage-current mode can accurately detect the DUV radiation both qualitatively and quantitatively. Accordingly, a dark/photo voltage ratio of 15 was achieved, which is comparable to that of previously-reported β-Ga2O3 interdigital metal-semiconductor-metal photoconductor. More importantly, the aperture ratio of our proposed device exceeds 80%, nearly doubling that of the conventional interdigital metal-semiconductor-metal devices including photoconductor and Schottky-type photodiode, which can intensively benefit the detection efficiency. Furthermore, it was found the dark/photo voltage ratio was nearly trebled with the assistance of two Zener diodes, and further enhancement can be expected by increasing the operating current and/or adopting Zener diodes with smaller Zener voltage. Therefore, this work provides a promising alternative for solar-blind DUV detection.
Persistent Identifierhttp://hdl.handle.net/10722/247426
ISSN
2018 Impact Factor: 1.579
2020 SCImago Journal Rankings: 0.421
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorQian, LX-
dc.contributor.authorLiu, XZ-
dc.contributor.authorSheng, T-
dc.contributor.authorZhang, WL-
dc.contributor.authorLi, YR-
dc.contributor.authorLai, PT-
dc.date.accessioned2017-10-18T08:27:04Z-
dc.date.available2017-10-18T08:27:04Z-
dc.date.issued2016-
dc.identifier.citationAIP Advances, 2016, v. 6 n. 4, article no. 045009-
dc.identifier.issn2158-3226-
dc.identifier.urihttp://hdl.handle.net/10722/247426-
dc.description.abstractA four-terminal photodetector was fabricated on the (2⎯⎯⎯012¯01)-dominant β-Ga2O3 thin film which was deposited in a plasma-assisted molecular beam epitaxy system. The suitability of this film for solar-blind DUV detection was proved by its transmission spectra. Moreover, the device operating in a specific voltage-current mode can accurately detect the DUV radiation both qualitatively and quantitatively. Accordingly, a dark/photo voltage ratio of 15 was achieved, which is comparable to that of previously-reported β-Ga2O3 interdigital metal-semiconductor-metal photoconductor. More importantly, the aperture ratio of our proposed device exceeds 80%, nearly doubling that of the conventional interdigital metal-semiconductor-metal devices including photoconductor and Schottky-type photodiode, which can intensively benefit the detection efficiency. Furthermore, it was found the dark/photo voltage ratio was nearly trebled with the assistance of two Zener diodes, and further enhancement can be expected by increasing the operating current and/or adopting Zener diodes with smaller Zener voltage. Therefore, this work provides a promising alternative for solar-blind DUV detection.-
dc.languageeng-
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://aipadvances.aip.org/-
dc.relation.ispartofAIP Advances-
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.titleβ-Ga2O3 solar-blind deep-ultraviolet photodetector based on a four-terminal structure with or without Zener diodes-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.4947137-
dc.identifier.scopuseid_2-s2.0-84968677673-
dc.identifier.hkuros280813-
dc.identifier.volume6-
dc.identifier.issue4-
dc.identifier.spagearticle no. 045009-
dc.identifier.epagearticle no. 045009-
dc.identifier.isiWOS:000375845100009-
dc.publisher.placeUnited States-
dc.identifier.issnl2158-3226-

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