File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Improved interfacial and electrical properties of HfLaON gate dielectric Ge MOS capacitor by NbON/Si dual passivation layer and fluorine incorporation

TitleImproved interfacial and electrical properties of HfLaON gate dielectric Ge MOS capacitor by NbON/Si dual passivation layer and fluorine incorporation
Authors
Huang, YXu, JPLiu, LLai, PTTang, WM
Issue Date2016
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2016, v. 109 n. 19, article no. 193504 How to Cite?
DOI: http://dx.doi.org/10.1063/1.4967186
Persistent Identifierhttp://hdl.handle.net/10722/247432
ISSN
0003-6951
2021 Impact Factor: 3.971
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID
WOS:000387999600058

 

DC FieldValueLanguage
dc.contributor.authorHuang, Y-
dc.contributor.authorXu, JP-
dc.contributor.authorLiu, L-
dc.contributor.authorLai, PT-
dc.contributor.authorTang, WM-
dc.date.accessioned2017-10-18T08:27:10Z-
dc.date.available2017-10-18T08:27:10Z-
dc.date.issued2016-
dc.identifier.citationApplied Physics Letters, 2016, v. 109 n. 19, article no. 193504-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/247432-
dc.languageeng-
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/-
dc.relation.ispartofApplied Physics Letters-
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Applied Physics Letters, 2016, v. 109 n. 19, article no. 193504 and may be found at https://doi.org/10.1063/1.4967186-
dc.titleImproved interfacial and electrical properties of HfLaON gate dielectric Ge MOS capacitor by NbON/Si dual passivation layer and fluorine incorporation-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.4967186-
dc.identifier.scopuseid_2-s2.0-84994803343-
dc.identifier.hkuros280853-
dc.identifier.volume109-
dc.identifier.issue19-
dc.identifier.spagearticle no. 193504-
dc.identifier.epagearticle no. 193504-
dc.identifier.isiWOS:000387999600058-
dc.publisher.placeUnited States-
dc.identifier.issnl0003-6951-

Export via OAI-PMH Interface in XML Formats

OR

Export to Other Non-XML Formats