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- Publisher Website: 10.1109/LED.2017.2678468
- Scopus: eid_2-s2.0-85019204552
- WOS: WOS:000400413200011
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Article: Improved Stability of α -InGaZnO Thin-Film Transistor under Positive Gate Bias Stress by Using Fluorine Plasma Treatment
Title | Improved Stability of α -InGaZnO Thin-Film Transistor under Positive Gate Bias Stress by Using Fluorine Plasma Treatment |
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Authors | |
Keywords | electrical instability fluorine treatment high-k gate dielectric InGaZnO (IGZO) thin-film transistor (TFT) |
Issue Date | 2017 |
Publisher | IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55 |
Citation | IEEE Electron Device Letters, 2017, v. 38, p. 576-579 How to Cite? |
Persistent Identifier | http://hdl.handle.net/10722/247439 |
ISSN | 2023 Impact Factor: 4.1 2023 SCImago Journal Rankings: 1.250 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Huang, XD | - |
dc.contributor.author | SONG, J | - |
dc.contributor.author | Lai, PT | - |
dc.date.accessioned | 2017-10-18T08:27:16Z | - |
dc.date.available | 2017-10-18T08:27:16Z | - |
dc.date.issued | 2017 | - |
dc.identifier.citation | IEEE Electron Device Letters, 2017, v. 38, p. 576-579 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10722/247439 | - |
dc.language | eng | - |
dc.publisher | IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55 | - |
dc.relation.ispartof | IEEE Electron Device Letters | - |
dc.rights | IEEE Electron Device Letters. Copyright © IEEE. | - |
dc.rights | ©20xx IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | - |
dc.subject | electrical instability | - |
dc.subject | fluorine treatment | - |
dc.subject | high-k gate dielectric | - |
dc.subject | InGaZnO (IGZO) | - |
dc.subject | thin-film transistor (TFT) | - |
dc.title | Improved Stability of α -InGaZnO Thin-Film Transistor under Positive Gate Bias Stress by Using Fluorine Plasma Treatment | - |
dc.type | Article | - |
dc.identifier.email | Lai, PT: laip@eee.hku.hk | - |
dc.identifier.authority | Lai, PT=rp00130 | - |
dc.identifier.doi | 10.1109/LED.2017.2678468 | - |
dc.identifier.scopus | eid_2-s2.0-85019204552 | - |
dc.identifier.hkuros | 280921 | - |
dc.identifier.volume | 38 | - |
dc.identifier.spage | 576 | - |
dc.identifier.epage | 579 | - |
dc.identifier.isi | WOS:000400413200011 | - |
dc.publisher.place | United States | - |
dc.identifier.issnl | 0741-3106 | - |