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Article: Wafer-scale Fabrication of Non-Polar Mesoporous GaN Distributed Bragg Reflectors via Electrochemical Porosification

TitleWafer-scale Fabrication of Non-Polar Mesoporous GaN Distributed Bragg Reflectors via Electrochemical Porosification
Authors
Issue Date2017
PublisherNature Publishing Group: Open Access Journals - Option C. The Journal's web site is located at http://www.nature.com/srep/index.html
Citation
Scientific Reports, 2017, v. 7, p. 45344 How to Cite?
AbstractDistributed Bragg reflectors (DBRs) are essential components for the development of optoelectronic devices. For many device applications, it is highly desirable to achieve not only high reflectivity and low absorption, but also good conductivity to allow effective electrical injection of charges. Here, we demonstrate the wafer-scale fabrication of highly reflective and conductive non-polar gallium nitride (GaN) DBRs, consisting of perfectly lattice-matched non-polar (11–20) GaN and mesoporous GaN layers that are obtained by a facile one-step electrochemical etching method without any extra processing steps. The GaN/mesoporous GaN DBRs exhibit high peak reflectivities (>96%) across the entire visible spectrum and wide spectral stop-band widths (full-width at half-maximum >80 nm), while preserving the material quality and showing good electrical conductivity. Such mesoporous GaN DBRs thus provide a promising and scalable platform for high performance GaN-based optoelectronic, photonic, and quantum photonic devices.
Persistent Identifierhttp://hdl.handle.net/10722/247451
ISSN
2019 Impact Factor: 3.998
2015 SCImago Journal Rankings: 2.073
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorZhu, T-
dc.contributor.authorLiu, Y-
dc.contributor.authorDing, T-
dc.contributor.authorFu, WYG-
dc.contributor.authorJarman, J-
dc.contributor.authorRen, CX-
dc.contributor.authorKumar, RV-
dc.contributor.authorOliver, R-
dc.date.accessioned2017-10-18T08:27:28Z-
dc.date.available2017-10-18T08:27:28Z-
dc.date.issued2017-
dc.identifier.citationScientific Reports, 2017, v. 7, p. 45344-
dc.identifier.issn2045-2322-
dc.identifier.urihttp://hdl.handle.net/10722/247451-
dc.description.abstractDistributed Bragg reflectors (DBRs) are essential components for the development of optoelectronic devices. For many device applications, it is highly desirable to achieve not only high reflectivity and low absorption, but also good conductivity to allow effective electrical injection of charges. Here, we demonstrate the wafer-scale fabrication of highly reflective and conductive non-polar gallium nitride (GaN) DBRs, consisting of perfectly lattice-matched non-polar (11–20) GaN and mesoporous GaN layers that are obtained by a facile one-step electrochemical etching method without any extra processing steps. The GaN/mesoporous GaN DBRs exhibit high peak reflectivities (>96%) across the entire visible spectrum and wide spectral stop-band widths (full-width at half-maximum >80 nm), while preserving the material quality and showing good electrical conductivity. Such mesoporous GaN DBRs thus provide a promising and scalable platform for high performance GaN-based optoelectronic, photonic, and quantum photonic devices.-
dc.languageeng-
dc.publisherNature Publishing Group: Open Access Journals - Option C. The Journal's web site is located at http://www.nature.com/srep/index.html-
dc.relation.ispartofScientific Reports-
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.titleWafer-scale Fabrication of Non-Polar Mesoporous GaN Distributed Bragg Reflectors via Electrochemical Porosification-
dc.typeArticle-
dc.identifier.emailFu, WYG: wyfu@hku.hk-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1038/srep45344-
dc.identifier.scopuseid_2-s2.0-85016332727-
dc.identifier.hkuros282426-
dc.identifier.volume7-
dc.identifier.spage45344-
dc.identifier.epage45344-
dc.identifier.isiWOS:000397399200001-
dc.publisher.placeUnited Kingdom-

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