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Conference Paper: Comparative study of InGaZnO thin-film transistors with single and dual NbLaO gate dielectric layers

TitleComparative study of InGaZnO thin-film transistors with single and dual NbLaO gate dielectric layers
Authors
Song, JQLai, PTHuang, XD
Keywordsbuffer layer
gate dielectric
InGaZnO
NbLaO
thin-film transistor (TFT)
Issue Date2016
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853
Citation
Proceedings of the 2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, China, 3-5 August 2016, p. 173-176 How to Cite?
DOI: http://dx.doi.org/10.1109/EDSSC.2016.7785237
Persistent Identifierhttp://hdl.handle.net/10722/247820

 

DC FieldValueLanguage
dc.contributor.authorSong, JQ-
dc.contributor.authorLai, PT-
dc.contributor.authorHuang, XD-
dc.date.accessioned2017-10-18T08:33:10Z-
dc.date.available2017-10-18T08:33:10Z-
dc.date.issued2016-
dc.identifier.citationProceedings of the 2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, China, 3-5 August 2016, p. 173-176-
dc.identifier.urihttp://hdl.handle.net/10722/247820-
dc.languageeng-
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853-
dc.relation.ispartofIEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)-
dc.rightsIEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC). Copyright © IEEE.-
dc.rights©2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.-
dc.subjectbuffer layer-
dc.subjectgate dielectric-
dc.subjectInGaZnO-
dc.subjectNbLaO-
dc.subjectthin-film transistor (TFT)-
dc.titleComparative study of InGaZnO thin-film transistors with single and dual NbLaO gate dielectric layers-
dc.typeConference_Paper-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.1109/EDSSC.2016.7785237-
dc.identifier.scopuseid_2-s2.0-85010521570-
dc.identifier.hkuros280931-
dc.identifier.spage173-
dc.identifier.epage176-
dc.publisher.placeUnited States-

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