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Article: Electrical and Interfacial Properties of GaAs MOS Capacitors With La-Doped ZrON as Interfacial Passivation Layer

TitleElectrical and Interfacial Properties of GaAs MOS Capacitors With La-Doped ZrON as Interfacial Passivation Layer
Authors
KeywordsGaAs MOS capacitors
high-k dielectric
interface-state density
interfacial passivation layer (IPL).
Issue Date2017
Citation
IEEE Transactions on Electron Devices, 2017, v. 64, p. 2179-2184 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/248410
ISSN
2019 Impact Factor: 2.913
2015 SCImago Journal Rankings: 1.436
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLu, HH-
dc.contributor.authorXu, JP-
dc.contributor.authorLiu, L-
dc.contributor.authorLai, PT-
dc.contributor.authorTang, WM-
dc.date.accessioned2017-10-18T08:42:45Z-
dc.date.available2017-10-18T08:42:45Z-
dc.date.issued2017-
dc.identifier.citationIEEE Transactions on Electron Devices, 2017, v. 64, p. 2179-2184-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10722/248410-
dc.languageeng-
dc.relation.ispartofIEEE Transactions on Electron Devices-
dc.subjectGaAs MOS capacitors-
dc.subjecthigh-k dielectric-
dc.subjectinterface-state density-
dc.subjectinterfacial passivation layer (IPL).-
dc.titleElectrical and Interfacial Properties of GaAs MOS Capacitors With La-Doped ZrON as Interfacial Passivation Layer-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.1109/TED.2017.2686867-
dc.identifier.scopuseid_2-s2.0-85018172158-
dc.identifier.hkuros280925-
dc.identifier.volume64-
dc.identifier.spage2179-
dc.identifier.epage2184-
dc.identifier.eissn1557-9646-
dc.identifier.isiWOS:000399935800042-
dc.identifier.issnl0018-9383-

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