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- Publisher Website: 10.1002/pssr.201700180
- Scopus: eid_2-s2.0-85029046503
- WOS: WOS:000410132200006
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Article: Improved Electrical Properties and Reliability of GaAs Metal–Oxide–Semiconductor Capacitor by Using LaAlON Passivation Layer
Title | Improved Electrical Properties and Reliability of GaAs Metal–Oxide–Semiconductor Capacitor by Using LaAlON Passivation Layer |
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Authors | |
Keywords | GaAs interface states LaAlON metal–oxide–semiconductor structures passivation thin films |
Issue Date | 2017 |
Publisher | Wiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1862-6270 |
Citation | Physica Status Solidi - Rapid Research Letters, 2017, v. 11, p. 1700180 How to Cite? |
Persistent Identifier | http://hdl.handle.net/10722/249634 |
ISSN | 2023 Impact Factor: 2.5 2023 SCImago Journal Rankings: 0.655 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | LIU, L | - |
dc.contributor.author | Choi, HW | - |
dc.contributor.author | Xu, JP | - |
dc.contributor.author | Lai, PT | - |
dc.date.accessioned | 2017-11-21T03:04:55Z | - |
dc.date.available | 2017-11-21T03:04:55Z | - |
dc.date.issued | 2017 | - |
dc.identifier.citation | Physica Status Solidi - Rapid Research Letters, 2017, v. 11, p. 1700180 | - |
dc.identifier.issn | 1862-6254 | - |
dc.identifier.uri | http://hdl.handle.net/10722/249634 | - |
dc.language | eng | - |
dc.publisher | Wiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1862-6270 | - |
dc.relation.ispartof | Physica Status Solidi - Rapid Research Letters | - |
dc.rights | postprint: This is the accepted version of the following article: FULL CITE, which has been published in final form at [Link to final article]. Preprint This is the pre-peer reviewed version of the following article: FULL CITE, which has been published in final form at [Link to final article]. | - |
dc.subject | GaAs | - |
dc.subject | interface states | - |
dc.subject | LaAlON | - |
dc.subject | metal–oxide–semiconductor structures | - |
dc.subject | passivation | - |
dc.subject | thin films | - |
dc.title | Improved Electrical Properties and Reliability of GaAs Metal–Oxide–Semiconductor Capacitor by Using LaAlON Passivation Layer | - |
dc.type | Article | - |
dc.identifier.email | Choi, HW: hwchoi@hku.hk | - |
dc.identifier.email | Lai, PT: laip@eee.hku.hk | - |
dc.identifier.authority | Choi, HW=rp00108 | - |
dc.identifier.authority | Lai, PT=rp00130 | - |
dc.identifier.doi | 10.1002/pssr.201700180 | - |
dc.identifier.scopus | eid_2-s2.0-85029046503 | - |
dc.identifier.hkuros | 283026 | - |
dc.identifier.volume | 11 | - |
dc.identifier.spage | 1700180 | - |
dc.identifier.epage | 1700180 | - |
dc.identifier.isi | WOS:000410132200006 | - |
dc.publisher.place | Germany | - |
dc.identifier.issnl | 1862-6254 | - |