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Conference Paper: Design and fabrication of micro hot-wire flow sensor using 0.35μm CMOS MEMS technology

TitleDesign and fabrication of micro hot-wire flow sensor using 0.35μm CMOS MEMS technology
Authors
Issue Date2014
Citation
9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014, 2014, p. 289-293 How to Cite?
Abstract© 2014 IEEE. MEMS sensors are promising for Energy Efficient Building (EeB) because of the potential low cost and low power consumption. Various flow sensors based on MEMS technology have been fabricated. In this work, we designed and fabricated a polysilicon micro hot-wire flow sensor using a commercial 0.35μm 2P4M CMOS technology followed by post-CMOS processing. A post-CMOS MEMS process for a 1.5mm×1.5mm sensor chip using Deep Reactive Ion Etch (DRIE) and spray coating was utilized to finish the fabrication. The fabricated flow sensor was characterized at different flow rates. The fabricated sensor with a dimension of 300μm×2μm×3.76μm demonstrated a sensitivity of 23.87 mV/(m/s) and power consumption of 0.79 mW at Uin =5m/s. The experiment results were consistent with the theoretical prediction and the best results showed an average error of only 5%.
Persistent Identifierhttp://hdl.handle.net/10722/255956

 

DC FieldValueLanguage
dc.contributor.authorMiao, Zhuonan-
dc.contributor.authorChao, Christopher Y.H.-
dc.contributor.authorChiu, Yi-
dc.contributor.authorLin, Chia Wei-
dc.contributor.authorLee, Yi Kuen-
dc.date.accessioned2018-07-16T06:14:10Z-
dc.date.available2018-07-16T06:14:10Z-
dc.date.issued2014-
dc.identifier.citation9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014, 2014, p. 289-293-
dc.identifier.urihttp://hdl.handle.net/10722/255956-
dc.description.abstract© 2014 IEEE. MEMS sensors are promising for Energy Efficient Building (EeB) because of the potential low cost and low power consumption. Various flow sensors based on MEMS technology have been fabricated. In this work, we designed and fabricated a polysilicon micro hot-wire flow sensor using a commercial 0.35μm 2P4M CMOS technology followed by post-CMOS processing. A post-CMOS MEMS process for a 1.5mm×1.5mm sensor chip using Deep Reactive Ion Etch (DRIE) and spray coating was utilized to finish the fabrication. The fabricated flow sensor was characterized at different flow rates. The fabricated sensor with a dimension of 300μm×2μm×3.76μm demonstrated a sensitivity of 23.87 mV/(m/s) and power consumption of 0.79 mW at Uin =5m/s. The experiment results were consistent with the theoretical prediction and the best results showed an average error of only 5%.-
dc.languageeng-
dc.relation.ispartof9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014-
dc.titleDesign and fabrication of micro hot-wire flow sensor using 0.35μm CMOS MEMS technology-
dc.typeConference_Paper-
dc.description.natureLink_to_subscribed_fulltext-
dc.identifier.doi10.1109/NEMS.2014.6908810-
dc.identifier.scopuseid_2-s2.0-84908626115-
dc.identifier.spage289-
dc.identifier.epage293-

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