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Conference Paper: Switching of Resistive Memory Behavior from Binary to Ternary Logic via Alteration of Substituent Positioning on the Subphthalocyanine Core

TitleSwitching of Resistive Memory Behavior from Binary to Ternary Logic via Alteration of Substituent Positioning on the Subphthalocyanine Core
Authors
Issue Date2018
Citation
The 25th Symposium on Chemistry Postgraduate Research in Hong Kong, The Hong Kong University of Science and Technology, Hong Kong, PR China, 28 April 2018, p. INORG-49 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/256419

 

DC FieldValueLanguage
dc.contributor.authorChan, H-
dc.contributor.authorWong, HL-
dc.contributor.authorNg, M-
dc.contributor.authorPoon, CT-
dc.contributor.authorYam, VWW-
dc.date.accessioned2018-07-20T06:34:20Z-
dc.date.available2018-07-20T06:34:20Z-
dc.date.issued2018-
dc.identifier.citationThe 25th Symposium on Chemistry Postgraduate Research in Hong Kong, The Hong Kong University of Science and Technology, Hong Kong, PR China, 28 April 2018, p. INORG-49-
dc.identifier.urihttp://hdl.handle.net/10722/256419-
dc.languageeng-
dc.relation.ispartofThe 25th Symposium on Chemistry Postgraduate Research in Hong Kong-
dc.titleSwitching of Resistive Memory Behavior from Binary to Ternary Logic via Alteration of Substituent Positioning on the Subphthalocyanine Core-
dc.typeConference_Paper-
dc.identifier.emailChan, H: ckim629@hku.hk-
dc.identifier.emailNg, M: mkyng@hku.hk-
dc.identifier.emailYam, VWW: wwyam@hku.hk-
dc.identifier.authorityYam, VWW=rp00822-
dc.identifier.hkuros285954-
dc.identifier.spageINORG-
dc.identifier.epage49-

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