File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Dirac-source field-effect transistors as energy-efficient, high-performance electronic switches

TitleDirac-source field-effect transistors as energy-efficient, high-performance electronic switches
Authors
Issue Date2018
PublisherAmerican Association for the Advancement of Science. The Journal's web site is located at http://sciencemag.org
Citation
Science, 2018, v. 361 n. 6400, p. 387-392 How to Cite?
AbstractAn efficient way to reduce the power is to lower the supply voltage VDD, but this voltage is restricted by the 60 millivolts per decade thermionic limit of subthreshold swing (SS) in field-effect transistors (FETs). We show that a graphene Dirac source (DS) with a much narrower electron density distribution around the Fermi level than that of conventional FETs can lower SS. A DS-FET with a carbon nanotube channel provided an average SS of 40 millivolt per decade over four decades of current at room temperature and high device current I60 of up to 40 microampere per micrometer at 60 millivolts per decade. When compared with state-of-the-art Si 14-nanometer node FETs, a similar Ion is realized but at much lower supply voltage of 0.5 versus 0.7 volts for Si, and a much steeper SS below 35 millivolts per decade in the off-state.
Persistent Identifierhttp://hdl.handle.net/10722/258715
ISSN
2017 Impact Factor: 41.058
2015 SCImago Journal Rankings: 13.217
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorQiu, CG-
dc.contributor.authorLiu, F-
dc.contributor.authorXu, L-
dc.contributor.authorDeng, B-
dc.contributor.authorXiao, MM-
dc.contributor.authorSi, J-
dc.contributor.authorLin, L-
dc.contributor.authorZhang, ZY-
dc.contributor.authorWang, J-
dc.contributor.authorGuo, H-
dc.contributor.authorPeng, HL-
dc.contributor.authorPeng, LM-
dc.date.accessioned2018-08-22T01:42:54Z-
dc.date.available2018-08-22T01:42:54Z-
dc.date.issued2018-
dc.identifier.citationScience, 2018, v. 361 n. 6400, p. 387-392-
dc.identifier.issn0036-8075-
dc.identifier.urihttp://hdl.handle.net/10722/258715-
dc.description.abstractAn efficient way to reduce the power is to lower the supply voltage VDD, but this voltage is restricted by the 60 millivolts per decade thermionic limit of subthreshold swing (SS) in field-effect transistors (FETs). We show that a graphene Dirac source (DS) with a much narrower electron density distribution around the Fermi level than that of conventional FETs can lower SS. A DS-FET with a carbon nanotube channel provided an average SS of 40 millivolt per decade over four decades of current at room temperature and high device current I60 of up to 40 microampere per micrometer at 60 millivolts per decade. When compared with state-of-the-art Si 14-nanometer node FETs, a similar Ion is realized but at much lower supply voltage of 0.5 versus 0.7 volts for Si, and a much steeper SS below 35 millivolts per decade in the off-state.-
dc.languageeng-
dc.publisherAmerican Association for the Advancement of Science. The Journal's web site is located at http://sciencemag.org-
dc.relation.ispartofScience-
dc.rightsScience. Copyright © American Association for the Advancement of Science.-
dc.rightsThis is the author’s version of the work. It is posted here by permission of the AAAS for personal use, not for redistribution. The definitive version was published in [Science Journal Title] on [Volume number and date], DOI: [insert DOI number].-
dc.titleDirac-source field-effect transistors as energy-efficient, high-performance electronic switches-
dc.typeArticle-
dc.identifier.emailLiu, F: feiliu@hku.hk-
dc.identifier.emailWang, J: jianwang@hku.hk-
dc.identifier.authorityLiu, F=rp02229-
dc.identifier.authorityWang, J=rp00799-
dc.identifier.doi10.1126/science.aap9195-
dc.identifier.pmid29903885-
dc.identifier.hkuros287651-
dc.identifier.volume361-
dc.identifier.issue6400-
dc.identifier.spage387-
dc.identifier.epage392-
dc.identifier.isiWOS:000439923700040-
dc.publisher.placeUnited States-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats