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Article: Hole doping in epitaxial MoSe2 monolayer by nitrogen plasma treatment

TitleHole doping in epitaxial MoSe2 monolayer by nitrogen plasma treatment
Authors
Issue Date2018
PublisherInstitute of Physics Publishing Ltd. The Journal's web site is located at http://iopscience.iop.org/2053-1583/
Citation
2D Materials, 2018, v. 5 n. 4, p. 041005:1-8 How to Cite?
AbstractMany transition-metal dichalcogenides, such as MoSe2, are direct-gap semiconductors at monolayer thickness, which hold potentials in nano-electronics, optoelectronics, and some new concept spin- and valley-electronic applications. For device application, however, controllable doping of the materials is essential. Here we report hole doping of epitaxial MoSe2 by nitrogen (N) plasma treatment with the aim of understanding the defect structure and its electronic characteristics. Examinations by annular dark field scanning transmission electron microscopy clearly reveal substitutional doping of N by replacing Se atoms in MoSe2 monolayer upon N-plasma treatment, though creation of Se vacancies are also possible. Interestingly, we note an unexpectedly high concentration of 'dual defects', where both Se atoms in the top and bottom Se layers of MoSe2 at the same lattice site are substituted by N and/or become vacant, suggesting a catalytic effect of defect formation. X-ray photoelectron spectroscopy and electron energy loss spectroscopy confirm the presence of N–Mo bonds. Photoemission spectroscopy reveals an impurity band as well as the Fermi level shift, confirming the p-type doping effect in MoSe2 monolayer by N-plasma treatment. Consistent with the PES results, scanning tunneling spectroscopy measurement also reveal defect states peaked at 0.6–0.7 eV above the valance band maximum. The effectiveness of N-doping is discussed.
Persistent Identifierhttp://hdl.handle.net/10722/260567
ISSN
2017 Impact Factor: 7.042
2015 SCImago Journal Rankings: 4.344
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorXia, Y-
dc.contributor.authorWang, B-
dc.contributor.authorZhang, J-
dc.contributor.authorFeng, Y-
dc.contributor.authorLi, B-
dc.contributor.authorRen, X-
dc.contributor.authorTian, H-
dc.contributor.authorXu, J-
dc.contributor.authorHo, WK-
dc.contributor.authorXu, H-
dc.contributor.authorLiu, C-
dc.contributor.authorJin, CH-
dc.contributor.authorXie, MH-
dc.date.accessioned2018-09-14T08:43:51Z-
dc.date.available2018-09-14T08:43:51Z-
dc.date.issued2018-
dc.identifier.citation2D Materials, 2018, v. 5 n. 4, p. 041005:1-8-
dc.identifier.issn2053-1583-
dc.identifier.urihttp://hdl.handle.net/10722/260567-
dc.description.abstractMany transition-metal dichalcogenides, such as MoSe2, are direct-gap semiconductors at monolayer thickness, which hold potentials in nano-electronics, optoelectronics, and some new concept spin- and valley-electronic applications. For device application, however, controllable doping of the materials is essential. Here we report hole doping of epitaxial MoSe2 by nitrogen (N) plasma treatment with the aim of understanding the defect structure and its electronic characteristics. Examinations by annular dark field scanning transmission electron microscopy clearly reveal substitutional doping of N by replacing Se atoms in MoSe2 monolayer upon N-plasma treatment, though creation of Se vacancies are also possible. Interestingly, we note an unexpectedly high concentration of 'dual defects', where both Se atoms in the top and bottom Se layers of MoSe2 at the same lattice site are substituted by N and/or become vacant, suggesting a catalytic effect of defect formation. X-ray photoelectron spectroscopy and electron energy loss spectroscopy confirm the presence of N–Mo bonds. Photoemission spectroscopy reveals an impurity band as well as the Fermi level shift, confirming the p-type doping effect in MoSe2 monolayer by N-plasma treatment. Consistent with the PES results, scanning tunneling spectroscopy measurement also reveal defect states peaked at 0.6–0.7 eV above the valance band maximum. The effectiveness of N-doping is discussed.-
dc.languageeng-
dc.publisherInstitute of Physics Publishing Ltd. The Journal's web site is located at http://iopscience.iop.org/2053-1583/-
dc.relation.ispartof2D Materials-
dc.rights2D Materials. Copyright © Institute of Physics Publishing Ltd.-
dc.rightsThis is an author-created, un-copyedited version of an article published in 2D Materials. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/10.1088/2053-1583/aadb5c-
dc.titleHole doping in epitaxial MoSe2 monolayer by nitrogen plasma treatment-
dc.typeArticle-
dc.identifier.emailXu, J: jpxu@HKUCC-COM.hku.hk-
dc.identifier.emailHo, WK: howk@hku.hk-
dc.identifier.emailXie, MH: physhead@hku.hk-
dc.identifier.authorityXie, MH=rp00818-
dc.description.naturepostprint-
dc.identifier.doi10.1088/2053-1583/aadb5c-
dc.identifier.hkuros290469-
dc.identifier.volume5-
dc.identifier.issue4-
dc.identifier.spage041005:1-
dc.identifier.epage041005:8-
dc.identifier.isiWOS:000443770700001-
dc.publisher.placeUnited Kingdom-

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