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Article: Large Negative-Thermal-Quenching Effect in Phonon-Induced Light Emissions in Mn4+-Activated Fluoride Phosphor for Warm-White Light-Emitting Diodes

TitleLarge Negative-Thermal-Quenching Effect in Phonon-Induced Light Emissions in Mn4+-Activated Fluoride Phosphor for Warm-White Light-Emitting Diodes
Authors
Issue Date2018
PublisherAmerican Chemical Society: Open Access Titles. The Journal's web site is located at http://pubs.acs.org/journal/acsodf
Citation
ACS Omega, 2018, v. 3 n. 10, p. 13704-13710 How to Cite?
AbstractCurrently, hunting for anti-temperature-degradation high-efficiency phosphors has become crucially significant for fabricating high-brightness phosphor-converted white light-emitting diodes (pc-WLEDs). Herein, we show that photoluminescence in a kind of full-solution-processed K2SiF6:Mn4+ red phosphor exhibits an extraordinarily large negative thermal quenching property. For instance, under the excitation of 477 nm laser light, the sample photoluminescence intensity amazingly increases by 347-fold when the temperature is increased from 4 to 477 K. The temperature-driven transition probability enhancement of the phonon-induced luminescence around Mn4+ ions in the phosphor is argued to be responsible for the large negative-thermal-quenching phenomenon. We also demonstrate a pc-WLED with Ra of 82 and correlated color temperature of 2701 K by using the K2SiF6:Mn4+ red phosphor + commercial yellow phosphor of YAG:Ce3+.
Persistent Identifierhttp://hdl.handle.net/10722/266089
ISSN
2019 Impact Factor: 2.87
PubMed Central ID
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorTang, F-
dc.contributor.authorSu, Z-
dc.contributor.authorYe, H-
dc.contributor.authorGao, WP-
dc.contributor.authorPan, XQ-
dc.contributor.authorXu, S-
dc.date.accessioned2018-12-17T02:16:45Z-
dc.date.available2018-12-17T02:16:45Z-
dc.date.issued2018-
dc.identifier.citationACS Omega, 2018, v. 3 n. 10, p. 13704-13710-
dc.identifier.issn2470-1343-
dc.identifier.urihttp://hdl.handle.net/10722/266089-
dc.description.abstractCurrently, hunting for anti-temperature-degradation high-efficiency phosphors has become crucially significant for fabricating high-brightness phosphor-converted white light-emitting diodes (pc-WLEDs). Herein, we show that photoluminescence in a kind of full-solution-processed K2SiF6:Mn4+ red phosphor exhibits an extraordinarily large negative thermal quenching property. For instance, under the excitation of 477 nm laser light, the sample photoluminescence intensity amazingly increases by 347-fold when the temperature is increased from 4 to 477 K. The temperature-driven transition probability enhancement of the phonon-induced luminescence around Mn4+ ions in the phosphor is argued to be responsible for the large negative-thermal-quenching phenomenon. We also demonstrate a pc-WLED with Ra of 82 and correlated color temperature of 2701 K by using the K2SiF6:Mn4+ red phosphor + commercial yellow phosphor of YAG:Ce3+.-
dc.languageeng-
dc.publisherAmerican Chemical Society: Open Access Titles. The Journal's web site is located at http://pubs.acs.org/journal/acsodf-
dc.relation.ispartofACS Omega-
dc.rightsCopyright © 2018 American Chemical Society. This is an open access article published under an ACS AuthorChoice License, which permits copying and redistribution of the article or any adaptations for non-commercial purposes.-
dc.titleLarge Negative-Thermal-Quenching Effect in Phonon-Induced Light Emissions in Mn4+-Activated Fluoride Phosphor for Warm-White Light-Emitting Diodes-
dc.typeArticle-
dc.identifier.emailXu, S: sjxu@hku.hk-
dc.identifier.authorityXu, S=rp00821-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1021/acsomega.8b01127-
dc.identifier.pmid31458071-
dc.identifier.pmcidPMC6644705-
dc.identifier.scopuseid_2-s2.0-85055329848-
dc.identifier.hkuros296242-
dc.identifier.volume3-
dc.identifier.issue10-
dc.identifier.spage13704-
dc.identifier.epage13710-
dc.identifier.isiWOS:000449026500150-
dc.publisher.placeUnited States-

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