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- Publisher Website: 10.1109/EDSSC.2017.8333238
- Scopus: eid_2-s2.0-85045525871
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Conference Paper: Low-Voltage OTFT-Based H2 Sensor Fabricated on Vacuum Tape
| Title | Low-Voltage OTFT-Based H2 Sensor Fabricated on Vacuum Tape |
|---|---|
| Authors | |
| Keywords | flexible electronics H2 sensor OTFT |
| Issue Date | 2017 |
| Publisher | IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853 |
| Citation | 2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC), Hsinchu, Taiwan, 18-20 October 2017, p. 1-2 How to Cite? |
| Abstract | A low-voltage hydrogen sensor based on pentacene organic thin-film transistor (OTFT) with Pd source and drain (S/D) electrodes is fabricated on vacuum tape with a maximum temperature of 200 °C. The flexible sensor shows a clear decrease in drain current when exposed to H 2 in air at room temperature. Owing to reduced carrier mobility and increased S/D series resistance (both induced by the expansion of the Pd electrodes after absorbing hydrogen), rapid and concentration-dependent response of the OTFT is realized at various H 2 concentrations ranging from 200 ppm to 15,000 ppm. |
| Persistent Identifier | http://hdl.handle.net/10722/277740 |
| ISBN |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Li, B | - |
| dc.contributor.author | Lai, PT | - |
| dc.contributor.author | Tang, WM | - |
| dc.date.accessioned | 2019-10-04T08:00:23Z | - |
| dc.date.available | 2019-10-04T08:00:23Z | - |
| dc.date.issued | 2017 | - |
| dc.identifier.citation | 2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC), Hsinchu, Taiwan, 18-20 October 2017, p. 1-2 | - |
| dc.identifier.isbn | 978-1-5386-2908-6 | - |
| dc.identifier.uri | http://hdl.handle.net/10722/277740 | - |
| dc.description.abstract | A low-voltage hydrogen sensor based on pentacene organic thin-film transistor (OTFT) with Pd source and drain (S/D) electrodes is fabricated on vacuum tape with a maximum temperature of 200 °C. The flexible sensor shows a clear decrease in drain current when exposed to H 2 in air at room temperature. Owing to reduced carrier mobility and increased S/D series resistance (both induced by the expansion of the Pd electrodes after absorbing hydrogen), rapid and concentration-dependent response of the OTFT is realized at various H 2 concentrations ranging from 200 ppm to 15,000 ppm. | - |
| dc.language | eng | - |
| dc.publisher | IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853 | - |
| dc.relation.ispartof | IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) | - |
| dc.rights | IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC). Copyright © IEEE. | - |
| dc.rights | ©2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | - |
| dc.subject | flexible electronics | - |
| dc.subject | H2 sensor | - |
| dc.subject | OTFT | - |
| dc.title | Low-Voltage OTFT-Based H2 Sensor Fabricated on Vacuum Tape | - |
| dc.type | Conference_Paper | - |
| dc.identifier.email | Lai, PT: laip@eee.hku.hk | - |
| dc.identifier.authority | Lai, PT=rp00130 | - |
| dc.identifier.doi | 10.1109/EDSSC.2017.8333238 | - |
| dc.identifier.scopus | eid_2-s2.0-85045525871 | - |
| dc.identifier.hkuros | 306916 | - |
| dc.identifier.spage | 1 | - |
| dc.identifier.epage | 2 | - |
| dc.publisher.place | United States | - |