File Download
There are no files associated with this item.
Links for fulltext
(May Require Subscription)
- Publisher Website: 10.7567/1882-0786/ab1fa7
- Scopus: eid_2-s2.0-85069531096
- WOS: WOS:000468503400001
- Find via
Supplementary
- Citations:
- Appears in Collections:
Article: Improved electrical performance of multilayer MoS2 transistor by incorporating Al into host HfO2 as gate dielectric
Title | Improved electrical performance of multilayer MoS2 transistor by incorporating Al into host HfO2 as gate dielectric |
---|---|
Authors | |
Keywords | Aluminum Carrier mobility Contact resistance Gate dielectrics Hafnium oxides |
Issue Date | 2019 |
Publisher | IOP Publishing, published in association with Japan Society of Applied Physics. The Journal's web site is located at http://iopscience.iop.org/1882-0786/ |
Citation | Applied Physics Express, 2019, v. 12 n. 6, p. article no. 064005 How to Cite? |
Abstract | The effects of incorporating Al into HfO2 as gate dielectric on the back-gated MoS2 transistor are investigated. Hf0.5Al0.5O as gate dielectric exhibits excellent electrical characteristics: on/off ratio of 1.8 × 107, carrier mobility of 49.3 cm2/(V centerdot s), subthreshold swing of 118 mV dec−1, interface-state density of 2.3 × 1012 eV−1 cm−2, due to the Al incorporation into the HfO2 can passivate the defective states induced by oxygen vacancies and improve the dielectric densification and uniformity to obtain an excellent MoS2/Hf1-x Al x O interface. Besides, the intrinsic carrier mobility of 100 cm2 V−1 s−1 and contact resistance of 11.1 kΩ/μm indicates that the contact resistance is a main factor limiting the mobility. |
Description | eid_2-s2.0-85069531096link_to_subscribed_fulltext |
Persistent Identifier | http://hdl.handle.net/10722/277978 |
ISSN | 2023 Impact Factor: 2.3 2023 SCImago Journal Rankings: 0.487 |
ISI Accession Number ID |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | ZHAO, X | - |
dc.contributor.author | XU, J | - |
dc.contributor.author | LIU, L | - |
dc.contributor.author | Lai, PT | - |
dc.contributor.author | TANG, WM | - |
dc.date.accessioned | 2019-10-04T08:05:04Z | - |
dc.date.available | 2019-10-04T08:05:04Z | - |
dc.date.issued | 2019 | - |
dc.identifier.citation | Applied Physics Express, 2019, v. 12 n. 6, p. article no. 064005 | - |
dc.identifier.issn | 1882-0778 | - |
dc.identifier.uri | http://hdl.handle.net/10722/277978 | - |
dc.description | eid_2-s2.0-85069531096link_to_subscribed_fulltext | - |
dc.description.abstract | The effects of incorporating Al into HfO2 as gate dielectric on the back-gated MoS2 transistor are investigated. Hf0.5Al0.5O as gate dielectric exhibits excellent electrical characteristics: on/off ratio of 1.8 × 107, carrier mobility of 49.3 cm2/(V centerdot s), subthreshold swing of 118 mV dec−1, interface-state density of 2.3 × 1012 eV−1 cm−2, due to the Al incorporation into the HfO2 can passivate the defective states induced by oxygen vacancies and improve the dielectric densification and uniformity to obtain an excellent MoS2/Hf1-x Al x O interface. Besides, the intrinsic carrier mobility of 100 cm2 V−1 s−1 and contact resistance of 11.1 kΩ/μm indicates that the contact resistance is a main factor limiting the mobility. | - |
dc.language | eng | - |
dc.publisher | IOP Publishing, published in association with Japan Society of Applied Physics. The Journal's web site is located at http://iopscience.iop.org/1882-0786/ | - |
dc.relation.ispartof | Applied Physics Express | - |
dc.rights | Applied Physics Express. Copyright © IOP Publishing, published in association with Japan Society of Applied Physics. | - |
dc.rights | This is an author-created, un-copyedited version of an article published in [insert name of journal]. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/[insert DOI]. | - |
dc.subject | Aluminum | - |
dc.subject | Carrier mobility | - |
dc.subject | Contact resistance | - |
dc.subject | Gate dielectrics | - |
dc.subject | Hafnium oxides | - |
dc.title | Improved electrical performance of multilayer MoS2 transistor by incorporating Al into host HfO2 as gate dielectric | - |
dc.type | Article | - |
dc.identifier.email | Lai, PT: laip@eee.hku.hk | - |
dc.identifier.authority | Lai, PT=rp00130 | - |
dc.identifier.doi | 10.7567/1882-0786/ab1fa7 | - |
dc.identifier.scopus | eid_2-s2.0-85069531096 | - |
dc.identifier.hkuros | 306913 | - |
dc.identifier.volume | 12 | - |
dc.identifier.issue | 6 | - |
dc.identifier.spage | article no. 064005 | - |
dc.identifier.epage | article no. 064005 | - |
dc.identifier.isi | WOS:000468503400001 | - |
dc.publisher.place | United Kingdom | - |
dc.identifier.issnl | 1882-0778 | - |