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- Publisher Website: 10.1016/j.tsf.2018.10.004
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Article: Effects of source/drain-electrode material, thickness and fabrication method on the electrical performance of pentacene thin-film transistor
Title | Effects of source/drain-electrode material, thickness and fabrication method on the electrical performance of pentacene thin-film transistor |
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Authors | |
Keywords | Organic thin-film transistor Contact metal Fabrication method Electrode thickness |
Issue Date | 2018 |
Publisher | Elsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsf |
Citation | Thin Solid Films, 2018, v. 667, p. 28-33 How to Cite? |
Abstract | The effects of source/drain (S/D) electrode material (Ni, Pt and Pd) and deposition method (electron-beam evaporation and sputtering) on the performance of pentacene organic thin-film transistor (OTFT) are studied. Experimental results show that the OTFT with Pd S/D electrodes deposited by sputtering exhibits the best electrical performance. This should be due to the small charge-injection barrier at the pentacene/electrode interface and small thermal load generated during the metal deposition. Besides, through varying the Pd S/D electrode thickness, it is found that increasing the electrode thickness results in performance degradation due to degraded pentacene/electrode interface, which is caused by higher thermal stress developed during longer deposition time. |
Persistent Identifier | http://hdl.handle.net/10722/278166 |
ISSN | 2023 Impact Factor: 2.0 2023 SCImago Journal Rankings: 0.400 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | LI, B | - |
dc.contributor.author | HAN, CY | - |
dc.contributor.author | Lai, PT | - |
dc.contributor.author | TANG, WM | - |
dc.date.accessioned | 2019-10-04T08:08:45Z | - |
dc.date.available | 2019-10-04T08:08:45Z | - |
dc.date.issued | 2018 | - |
dc.identifier.citation | Thin Solid Films, 2018, v. 667, p. 28-33 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | http://hdl.handle.net/10722/278166 | - |
dc.description.abstract | The effects of source/drain (S/D) electrode material (Ni, Pt and Pd) and deposition method (electron-beam evaporation and sputtering) on the performance of pentacene organic thin-film transistor (OTFT) are studied. Experimental results show that the OTFT with Pd S/D electrodes deposited by sputtering exhibits the best electrical performance. This should be due to the small charge-injection barrier at the pentacene/electrode interface and small thermal load generated during the metal deposition. Besides, through varying the Pd S/D electrode thickness, it is found that increasing the electrode thickness results in performance degradation due to degraded pentacene/electrode interface, which is caused by higher thermal stress developed during longer deposition time. | - |
dc.language | eng | - |
dc.publisher | Elsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsf | - |
dc.relation.ispartof | Thin Solid Films | - |
dc.subject | Organic thin-film transistor | - |
dc.subject | Contact metal | - |
dc.subject | Fabrication method | - |
dc.subject | Electrode thickness | - |
dc.title | Effects of source/drain-electrode material, thickness and fabrication method on the electrical performance of pentacene thin-film transistor | - |
dc.type | Article | - |
dc.identifier.email | Lai, PT: laip@eee.hku.hk | - |
dc.identifier.authority | Lai, PT=rp00130 | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1016/j.tsf.2018.10.004 | - |
dc.identifier.scopus | eid_2-s2.0-85054445260 | - |
dc.identifier.hkuros | 306907 | - |
dc.identifier.volume | 667 | - |
dc.identifier.spage | 28 | - |
dc.identifier.epage | 33 | - |
dc.identifier.isi | WOS:000447652200005 | - |
dc.publisher.place | Switzerland | - |
dc.identifier.issnl | 0040-6090 | - |