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Article: Effects of La content in ZrLaON gate dielectric on the interfacial and electrical properties of GaAs metal-oxide-semiconductor devices

TitleEffects of La content in ZrLaON gate dielectric on the interfacial and electrical properties of GaAs metal-oxide-semiconductor devices
Authors
KeywordsDielectric devices
Dielectric materials
Gallium arsenide
Gate dielectrics
High-k dielectric
Issue Date2019
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst
Citation
Semiconductor Science and Technology, 2019, v. 34 n. 3, p. article no. 035027 How to Cite?
AbstractGaAs MOS capacitors with ZrLaON as the high-k dielectric layer and LaON as the interfacial passivation layer (IPL) are fabricated and the effects of the La content in ZrLaON on the device performance are investigated. Experimental results show that ZrLaON with a moderate or high La content induces serious moisture absorption, thus deteriorating the interfacial and electrical properties of the device, even with the LaON IPL. By adjusting the La content to a suitable value, e.g. a La/(La + Zr) atomic ratio of 13%, good interfacial and electrical properties can be obtained because the passivating role of La on the defects in ZrON can over-compensate the performance degradation induced by the moisture absorption. With the LaON IPL, further improvements in interfacial and electrical properties can be achieved because the LaON IPL can effectively passivate the As-O, Ga-O and As-As bonds at/near the high-k/GaAs interface.
Persistent Identifierhttp://hdl.handle.net/10722/278169
ISSN
2019 Impact Factor: 2.361
2015 SCImago Journal Rankings: 0.676

 

DC FieldValueLanguage
dc.contributor.authorLIU, L-
dc.contributor.authorLU, H-
dc.contributor.authorXU, J-
dc.contributor.authorLai, PT-
dc.contributor.authorTANG, WM-
dc.date.accessioned2019-10-04T08:08:48Z-
dc.date.available2019-10-04T08:08:48Z-
dc.date.issued2019-
dc.identifier.citationSemiconductor Science and Technology, 2019, v. 34 n. 3, p. article no. 035027-
dc.identifier.issn0268-1242-
dc.identifier.urihttp://hdl.handle.net/10722/278169-
dc.description.abstractGaAs MOS capacitors with ZrLaON as the high-k dielectric layer and LaON as the interfacial passivation layer (IPL) are fabricated and the effects of the La content in ZrLaON on the device performance are investigated. Experimental results show that ZrLaON with a moderate or high La content induces serious moisture absorption, thus deteriorating the interfacial and electrical properties of the device, even with the LaON IPL. By adjusting the La content to a suitable value, e.g. a La/(La + Zr) atomic ratio of 13%, good interfacial and electrical properties can be obtained because the passivating role of La on the defects in ZrON can over-compensate the performance degradation induced by the moisture absorption. With the LaON IPL, further improvements in interfacial and electrical properties can be achieved because the LaON IPL can effectively passivate the As-O, Ga-O and As-As bonds at/near the high-k/GaAs interface.-
dc.languageeng-
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst-
dc.relation.ispartofSemiconductor Science and Technology-
dc.rightsSemiconductor Science and Technology. Copyright © Institute of Physics Publishing.-
dc.rightsThis is an author-created, un-copyedited version of an article published in [insert name of journal]. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/[insert DOI].-
dc.subjectDielectric devices-
dc.subjectDielectric materials-
dc.subjectGallium arsenide-
dc.subjectGate dielectrics-
dc.subjectHigh-k dielectric-
dc.titleEffects of La content in ZrLaON gate dielectric on the interfacial and electrical properties of GaAs metal-oxide-semiconductor devices-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/1361-6641/aafc65-
dc.identifier.scopuseid_2-s2.0-85064069969-
dc.identifier.hkuros306910-
dc.identifier.volume34-
dc.identifier.issue3-
dc.identifier.spagearticle no. 035027-
dc.identifier.epagearticle no. 035027-
dc.publisher.placeUnited Kingdom-

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