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Article: Improvements of Performance and Reliability for Metal–Oxide–Nitride–Oxide–Silicon Flash Memory With NO- or N2O-Grown Oxynitride as Tunnel Layer

TitleImprovements of Performance and Reliability for Metal–Oxide–Nitride–Oxide–Silicon Flash Memory With NO- or N2O-Grown Oxynitride as Tunnel Layer
Authors
KeywordsSilicon
Nitrogen
MONOS devices
Educational institutions
Logic gates
Issue Date2014
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=7298
Citation
IEEE Transactions on Device and Materials Reliability, 2014, v. 14 n. 1, p. 9-12 How to Cite?
AbstractThe characteristics of oxynitride thermally grown in either NO or N 2 O ambient as a tunnel layer are investigated based on an Al/Al 2 O 3 /GdON/SiO x N y /Si structure. The physical thickness of each dielectric layer was measured and confirmed by multiwavelength ellipsometry and transmission electron microscopy. Experimental results reveal that better memory performances can be achieved for the metal-oxide-nitride-oxide-silicon (MONOS) device with NO-grown oxynitride as the tunnel layer, e.g., larger memory window, higher program/erase speed, better endurance, and retention characteristics, compared with devices with N 2 O -grown oxynitride and conventional SiO 2 as the tunnel layer. The involved mechanisms lie in NO-nitridation-induced smaller hole barrier height, formation of more strong Si-N bonds at/near the oxynitride/Si interface due to more nitrogen incorporation in the tunnel layer. Therefore, the application of NO-grown oxynitride as tunnel layer is promising in advanced MONOS nonvolatile memory devices.
Persistent Identifierhttp://hdl.handle.net/10722/278174
ISSN
2019 Impact Factor: 1.407
2015 SCImago Journal Rankings: 0.826

 

DC FieldValueLanguage
dc.contributor.authorChen, JX-
dc.contributor.authorXu, JP-
dc.contributor.authorLiu, L-
dc.contributor.authorHUANG, XD-
dc.contributor.authorLai, PT-
dc.contributor.authorXu, HX-
dc.date.accessioned2019-10-04T08:08:53Z-
dc.date.available2019-10-04T08:08:53Z-
dc.date.issued2014-
dc.identifier.citationIEEE Transactions on Device and Materials Reliability, 2014, v. 14 n. 1, p. 9-12-
dc.identifier.issn1530-4388-
dc.identifier.urihttp://hdl.handle.net/10722/278174-
dc.description.abstractThe characteristics of oxynitride thermally grown in either NO or N 2 O ambient as a tunnel layer are investigated based on an Al/Al 2 O 3 /GdON/SiO x N y /Si structure. The physical thickness of each dielectric layer was measured and confirmed by multiwavelength ellipsometry and transmission electron microscopy. Experimental results reveal that better memory performances can be achieved for the metal-oxide-nitride-oxide-silicon (MONOS) device with NO-grown oxynitride as the tunnel layer, e.g., larger memory window, higher program/erase speed, better endurance, and retention characteristics, compared with devices with N 2 O -grown oxynitride and conventional SiO 2 as the tunnel layer. The involved mechanisms lie in NO-nitridation-induced smaller hole barrier height, formation of more strong Si-N bonds at/near the oxynitride/Si interface due to more nitrogen incorporation in the tunnel layer. Therefore, the application of NO-grown oxynitride as tunnel layer is promising in advanced MONOS nonvolatile memory devices.-
dc.languageeng-
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=7298-
dc.relation.ispartofIEEE Transactions on Device and Materials Reliability-
dc.rightsIEEE Transactions on Device and Materials Reliability. Copyright © IEEE.-
dc.rights©20xx IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.-
dc.subjectSilicon-
dc.subjectNitrogen-
dc.subjectMONOS devices-
dc.subjectEducational institutions-
dc.subjectLogic gates-
dc.titleImprovements of Performance and Reliability for Metal–Oxide–Nitride–Oxide–Silicon Flash Memory With NO- or N2O-Grown Oxynitride as Tunnel Layer-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/TDMR.2013.2295325-
dc.identifier.scopuseid_2-s2.0-84898484430-
dc.identifier.hkuros306961-
dc.identifier.volume14-
dc.identifier.issue1-
dc.identifier.spage9-
dc.identifier.epage12-
dc.publisher.placeUnited States-

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