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Conference Paper: Effects of Gate Electron Concentration on Organic Thin-Film Transistors with Different Pentacene Thicknesses

TitleEffects of Gate Electron Concentration on Organic Thin-Film Transistors with Different Pentacene Thicknesses
Authors
Issue Date2019
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853
Citation
Proceedings of 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Xi'an, China, 12-14 June 2019, p. 1-3 How to Cite?
AbstractBottom-gate pentacene organic thin-film transistors (OTFTs) with different gate electron concentrations and pentacene thicknesses are fabricated. The performances of the OTFTs show dependence on both gate electron concentration and pentacene thickness. Electrons in the gate electrode can reduce the effect from surface optical phonons of the high-k gate dielectric (NdTaON), and so higher gate electron concentration gives better device performance. It is also supported by measurements at 140°C, where the remote phonon scattering is enhanced. Moreover, it is found that the extracted carrier mobility decreases with increasing pentacene thickness, which is attributed to the series resistance of the source/drain electrodes.
Persistent Identifierhttp://hdl.handle.net/10722/278343
ISBN

 

DC FieldValueLanguage
dc.contributor.authorSu, H-
dc.contributor.authorTang, WM-
dc.contributor.authorLai, PT-
dc.date.accessioned2019-10-04T08:12:10Z-
dc.date.available2019-10-04T08:12:10Z-
dc.date.issued2019-
dc.identifier.citationProceedings of 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Xi'an, China, 12-14 June 2019, p. 1-3-
dc.identifier.isbn978-1-7281-0287-0-
dc.identifier.urihttp://hdl.handle.net/10722/278343-
dc.description.abstractBottom-gate pentacene organic thin-film transistors (OTFTs) with different gate electron concentrations and pentacene thicknesses are fabricated. The performances of the OTFTs show dependence on both gate electron concentration and pentacene thickness. Electrons in the gate electrode can reduce the effect from surface optical phonons of the high-k gate dielectric (NdTaON), and so higher gate electron concentration gives better device performance. It is also supported by measurements at 140°C, where the remote phonon scattering is enhanced. Moreover, it is found that the extracted carrier mobility decreases with increasing pentacene thickness, which is attributed to the series resistance of the source/drain electrodes.-
dc.languageeng-
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853-
dc.relation.ispartofIEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)-
dc.rightsIEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC). Copyright © IEEE.-
dc.rights©2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.-
dc.titleEffects of Gate Electron Concentration on Organic Thin-Film Transistors with Different Pentacene Thicknesses-
dc.typeConference_Paper-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.1109/EDSSC.2019.8753965-
dc.identifier.hkuros306920-
dc.identifier.spage1-
dc.identifier.epage3-
dc.publisher.placeUnited States-

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