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Article: Characteristics of Ga-doped ZnO thin-film ultraviolet photodetectors fabricated on patterned Si substrate

TitleCharacteristics of Ga-doped ZnO thin-film ultraviolet photodetectors fabricated on patterned Si substrate
Authors
Keywordsthin film
oxide semiconductor
ultraviolet photodetectors
Issue Date2020
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst
Citation
Semiconductor Science and Technology, 2020, v. 35 n. 1, p. article no. 015007 How to Cite?
AbstractUltraviolet (UV) photodetectors have demonstrated wide applications in both civil and military fields such as pollution monitoring and missile warning. ZnO-based UV photodetectors have attracted tremendous attention due to the advantages of low cost and high chemical and thermal stability. In this work, Ga-doped ZnO (GZO) films were grown with the technique of RF magnetron sputtering and metal–semiconductor–metal (MSM) UV detectors were fabricated with the GZO films as the active detection layers. The as-sputtered films were further treated by the means of thermal annealing such that reduced oxygen vacancy and improved crystallization were achieved for the films. The effect of patterned Si substrates on the GZO UV detectors performance was revealed for the first time. With optimized annealing temperature and delicately designed substrate patterns, the responsibility of GZO MSM photodetectors has been greatly enhanced (e.g. about 2.5-folds higher than ones fabricated on non-patterned Si substrate). Our work on the GZO material and the structural design may pave a new way towards developing low-cost but high-performance UV detectors.
Persistent Identifierhttp://hdl.handle.net/10722/280420
ISSN
2017 Impact Factor: 2.28
2015 SCImago Journal Rankings: 0.676
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorWang, RX-
dc.contributor.authorWu, CY-
dc.contributor.authorPeng, Q-
dc.contributor.authorGe, XT-
dc.contributor.authorNing, JQ-
dc.contributor.authorXu, SJ-
dc.contributor.authorSun, Q-
dc.contributor.authorHuang, R-
dc.contributor.authorHuang, ZL-
dc.contributor.authorZhu, WQ-
dc.contributor.authorYang, H-
dc.date.accessioned2020-02-07T07:40:41Z-
dc.date.available2020-02-07T07:40:41Z-
dc.date.issued2020-
dc.identifier.citationSemiconductor Science and Technology, 2020, v. 35 n. 1, p. article no. 015007-
dc.identifier.issn0268-1242-
dc.identifier.urihttp://hdl.handle.net/10722/280420-
dc.description.abstractUltraviolet (UV) photodetectors have demonstrated wide applications in both civil and military fields such as pollution monitoring and missile warning. ZnO-based UV photodetectors have attracted tremendous attention due to the advantages of low cost and high chemical and thermal stability. In this work, Ga-doped ZnO (GZO) films were grown with the technique of RF magnetron sputtering and metal–semiconductor–metal (MSM) UV detectors were fabricated with the GZO films as the active detection layers. The as-sputtered films were further treated by the means of thermal annealing such that reduced oxygen vacancy and improved crystallization were achieved for the films. The effect of patterned Si substrates on the GZO UV detectors performance was revealed for the first time. With optimized annealing temperature and delicately designed substrate patterns, the responsibility of GZO MSM photodetectors has been greatly enhanced (e.g. about 2.5-folds higher than ones fabricated on non-patterned Si substrate). Our work on the GZO material and the structural design may pave a new way towards developing low-cost but high-performance UV detectors.-
dc.languageeng-
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst-
dc.relation.ispartofSemiconductor Science and Technology-
dc.rightsSemiconductor Science and Technology. Copyright © Institute of Physics Publishing.-
dc.rightsThis is an author-created, un-copyedited version of an article published in [insert name of journal]. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/[insert DOI].-
dc.subjectthin film-
dc.subjectoxide semiconductor-
dc.subjectultraviolet photodetectors-
dc.titleCharacteristics of Ga-doped ZnO thin-film ultraviolet photodetectors fabricated on patterned Si substrate-
dc.typeArticle-
dc.identifier.emailXu, SJ: sjxu@hku.hk-
dc.identifier.authorityXu, SJ=rp00821-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/1361-6641/ab5159-
dc.identifier.hkuros309058-
dc.identifier.volume35-
dc.identifier.issue1-
dc.identifier.spagearticle no. 015007-
dc.identifier.epagearticle no. 015007-
dc.identifier.isiWOS:000505738100001-
dc.publisher.placeUnited Kingdom-

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