File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Understanding the effects of iodine doping on the thermoelectric performance of n-type PbTe ingot materials

TitleUnderstanding the effects of iodine doping on the thermoelectric performance of n-type PbTe ingot materials
Authors
KeywordsCrystal lattices
Ingots
IodineIV-VI semiconductors
Layered semiconductors
Lead alloys
Issue Date2019
PublisherAIP Publishing LLC. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2019, v. 126 n. 2, p. article no. 025108 How to Cite?
AbstractThe superior performance of p-type PbTe has generated excitement toward discovering an n-type PbTe recipe to meet the manufacturing requirements for thermoelectric devices. PbI2 is a well-known dopant for n-type PbTe alloys fabrication. For the halogen family, the sintering process involves a common densifying strategy used to reduce the lattice thermal conductivity, which unfortunately causes strong deviations from nominal composition. Thus, to precisely determine the effects of iodine on PbTe’s electrical properties, PbI2-doped ingots were fabricated and characterized in this work. We found that the ingot samples exhibited high electrical conductivity, high power factors, and low lattice thermal conductivity when x equaled 0.004 and 0.005, especially at low temperatures, which was comparable with previous reports.
Persistent Identifierhttp://hdl.handle.net/10722/283413
ISSN
2019 Impact Factor: 2.286
2015 SCImago Journal Rankings: 0.603

 

DC FieldValueLanguage
dc.contributor.authorCUI, J-
dc.contributor.authorWang, M-
dc.contributor.authorXu, X-
dc.contributor.authorChen, Y-
dc.contributor.authorHe, J-
dc.date.accessioned2020-06-22T02:56:05Z-
dc.date.available2020-06-22T02:56:05Z-
dc.date.issued2019-
dc.identifier.citationJournal of Applied Physics, 2019, v. 126 n. 2, p. article no. 025108-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10722/283413-
dc.description.abstractThe superior performance of p-type PbTe has generated excitement toward discovering an n-type PbTe recipe to meet the manufacturing requirements for thermoelectric devices. PbI2 is a well-known dopant for n-type PbTe alloys fabrication. For the halogen family, the sintering process involves a common densifying strategy used to reduce the lattice thermal conductivity, which unfortunately causes strong deviations from nominal composition. Thus, to precisely determine the effects of iodine on PbTe’s electrical properties, PbI2-doped ingots were fabricated and characterized in this work. We found that the ingot samples exhibited high electrical conductivity, high power factors, and low lattice thermal conductivity when x equaled 0.004 and 0.005, especially at low temperatures, which was comparable with previous reports.-
dc.languageeng-
dc.publisherAIP Publishing LLC. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp-
dc.relation.ispartofJournal of Applied Physics-
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in [Journal of Applied Physics, 2019, v. 126 n. 2, article no. 025108] and may be found at [http://dx.doi.org/10.1063/1.5101034].-
dc.subjectCrystal lattices-
dc.subjectIngots-
dc.subjectIodineIV-VI semiconductors-
dc.subjectLayered semiconductors-
dc.subjectLead alloys-
dc.titleUnderstanding the effects of iodine doping on the thermoelectric performance of n-type PbTe ingot materials-
dc.typeArticle-
dc.identifier.emailChen, Y: yuechen@hku.hk-
dc.identifier.authorityChen, Y=rp01925-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.5101034-
dc.identifier.scopuseid_2-s2.0-85069047130-
dc.identifier.hkuros310528-
dc.identifier.volume126-
dc.identifier.issue2-
dc.identifier.spagearticle no. 025108-
dc.identifier.epagearticle no. 025108-
dc.publisher.placeUnited States-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats