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Conference Paper: TMD FinFET with 4 nm thin body and back gate control for future low power technology

TitleTMD FinFET with 4 nm thin body and back gate control for future low power technology
Authors
Chen, Min ChengLi, Kai ShinLi, Lain JongLu, Ang YuLi, Ming YangChang, Yung HuangLin, Chang HsienChen, Yi JuHou, Yun FangChen, Chun ChiWu, Bo WeiWu, Cheng SanYang, IvyLee, Yao JenShieh, Jia MinYeh, Wen KuanShih, Jyun HongSu, Po ChengSachid, Angada B.Wang, TahuiYang, Fu LiangHu, Chenming
Issue Date2015
Citation
2015 IEEE International Electron Devices Meeting (IEDM), Washington, DC, 7-9 December 2015. InInternational Electron Devices Meeting (IEDM), 2015 How to Cite?
DOI: http://dx.doi.org/10.1109/IEDM.2015.7409813
AbstractA 4 nm thin transition-metal dichalcogenide (TMD) body FinFET with back gate control is proposed and demonstrated for the first time. The TMD FinFET channel is deposited by CVD. Hydrogen plasma treatment of TMD is employed to lower the series resistance for the first time. The 2 nm thin back gate oxide enables 0.5 V of Vth shift with 1.2 V change in back bias for correcting device variations and dynamically configuring a device as a high performance or low leakage device. TMD can potentially provide sub-nm thin monolayer body needed for 2 nm node FinFET.
Persistent Identifierhttp://hdl.handle.net/10722/298149
ISSN
0163-1918
2020 SCImago Journal Rankings: 0.827
ISI Accession Number ID
WOS:000380472500207

 

DC FieldValueLanguage
dc.contributor.authorChen, Min Cheng-
dc.contributor.authorLi, Kai Shin-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorLu, Ang Yu-
dc.contributor.authorLi, Ming Yang-
dc.contributor.authorChang, Yung Huang-
dc.contributor.authorLin, Chang Hsien-
dc.contributor.authorChen, Yi Ju-
dc.contributor.authorHou, Yun Fang-
dc.contributor.authorChen, Chun Chi-
dc.contributor.authorWu, Bo Wei-
dc.contributor.authorWu, Cheng San-
dc.contributor.authorYang, Ivy-
dc.contributor.authorLee, Yao Jen-
dc.contributor.authorShieh, Jia Min-
dc.contributor.authorYeh, Wen Kuan-
dc.contributor.authorShih, Jyun Hong-
dc.contributor.authorSu, Po Cheng-
dc.contributor.authorSachid, Angada B.-
dc.contributor.authorWang, Tahui-
dc.contributor.authorYang, Fu Liang-
dc.contributor.authorHu, Chenming-
dc.date.accessioned2021-04-08T03:07:47Z-
dc.date.available2021-04-08T03:07:47Z-
dc.date.issued2015-
dc.identifier.citation2015 IEEE International Electron Devices Meeting (IEDM), Washington, DC, 7-9 December 2015. InInternational Electron Devices Meeting (IEDM), 2015-
dc.identifier.issn0163-1918-
dc.identifier.urihttp://hdl.handle.net/10722/298149-
dc.description.abstractA 4 nm thin transition-metal dichalcogenide (TMD) body FinFET with back gate control is proposed and demonstrated for the first time. The TMD FinFET channel is deposited by CVD. Hydrogen plasma treatment of TMD is employed to lower the series resistance for the first time. The 2 nm thin back gate oxide enables 0.5 V of Vth shift with 1.2 V change in back bias for correcting device variations and dynamically configuring a device as a high performance or low leakage device. TMD can potentially provide sub-nm thin monolayer body needed for 2 nm node FinFET.-
dc.languageeng-
dc.relation.ispartofInternational Electron Devices Meeting (IEDM)-
dc.titleTMD FinFET with 4 nm thin body and back gate control for future low power technology-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/IEDM.2015.7409813-
dc.identifier.scopuseid_2-s2.0-84964076479-
dc.identifier.isiWOS:000380472500207-
dc.identifier.issnl0163-1918-

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