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Conference Paper: Monolayer MoS2 for nonvolatile memory applications

TitleMonolayer MoS<inf>2</inf> for nonvolatile memory applications
Authors
Chang, Kai PingWang, Jer ChyiChen, Chang HsiaoLi, Lain JongLai, Chao Sung
Issue Date2017
Citation
2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings, 2017, p. 489-491 How to Cite?
DOI: http://dx.doi.org/10.1109/ICSICT.2016.7998959
AbstractIn this work, two-dimensional MoS2 has been performed for nonvolatile memory application as charge storage layer. The capacitance-voltage (C-V) hysteresis and programming characteristics of MoS2-NVMs with blocking oxide layer of various thicknesses have been further investigated. The MoS2-NVMs with 9-nm-thck blocking oxide layer exhibits a large hysteresis in the C-V sweeping and the fastest speed in programming characteristics. In addition, both electrons and holes can store in MoS2 monolayer, contributing to a promising application in future high-performance NVMs.
Persistent Identifierhttp://hdl.handle.net/10722/298226

 

DC FieldValueLanguage
dc.contributor.authorChang, Kai Ping-
dc.contributor.authorWang, Jer Chyi-
dc.contributor.authorChen, Chang Hsiao-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorLai, Chao Sung-
dc.date.accessioned2021-04-08T03:07:56Z-
dc.date.available2021-04-08T03:07:56Z-
dc.date.issued2017-
dc.identifier.citation2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings, 2017, p. 489-491-
dc.identifier.urihttp://hdl.handle.net/10722/298226-
dc.description.abstractIn this work, two-dimensional MoS2 has been performed for nonvolatile memory application as charge storage layer. The capacitance-voltage (C-V) hysteresis and programming characteristics of MoS2-NVMs with blocking oxide layer of various thicknesses have been further investigated. The MoS2-NVMs with 9-nm-thck blocking oxide layer exhibits a large hysteresis in the C-V sweeping and the fastest speed in programming characteristics. In addition, both electrons and holes can store in MoS2 monolayer, contributing to a promising application in future high-performance NVMs.-
dc.languageeng-
dc.relation.ispartof2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings-
dc.titleMonolayer MoS<inf>2</inf> for nonvolatile memory applications-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/ICSICT.2016.7998959-
dc.identifier.scopuseid_2-s2.0-85028680558-
dc.identifier.spage489-
dc.identifier.epage491-

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