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Article: Synthesis and optoelectronic applications of graphene/transition metal dichalcogenides flat-pack assembly

TitleSynthesis and optoelectronic applications of graphene/transition metal dichalcogenides flat-pack assembly
Authors
Issue Date2018
Citation
Carbon, 2018, v. 127, p. 602-610 How to Cite?
AbstractBeing a representative candidate from the two-dimensional (2D) materials family, graphene has been one of the most intensively researched candidates because of its ultrahigh carrier mobility, quantum Hall effects, excellent mechanical property and high optical transmittance. Unfortunately, the lack of a band gap makes graphene a poor fit for digital electronics, where the current on/off ratio is critical. Huge efforts have been advocated to discover new 2D layered materials with wonderful properties, which complements the needs of 2D electronics. Appropriately designed graphene based hybrid structure could perform better than its counterpart alone. The graphene hybrid structure soon become one of the most exciting frontiers in advanced 2D materials, and many efforts have been made to create artificial heterostructures by assembling of graphene with various layered materials. In this review, we present the recent development in synthesis and applications of graphene based 2D heterostructures. Although 2D transition metal dichalcogenide semiconductors have been demonstrated as strong candidates for next-generation electronics and optoelectronics, by combining advantages of various properties of 2D materials together with graphene, it is highly possible to build entire digital circuits using atomically thin components, and create many novel devices that can be utilized in different areas.
Persistent Identifierhttp://hdl.handle.net/10722/298238
ISSN
2021 Impact Factor: 11.307
2020 SCImago Journal Rankings: 2.250
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLi, Henan-
dc.contributor.authorShi, Yumeng-
dc.contributor.authorLi, Lain Jong-
dc.date.accessioned2021-04-08T03:07:58Z-
dc.date.available2021-04-08T03:07:58Z-
dc.date.issued2018-
dc.identifier.citationCarbon, 2018, v. 127, p. 602-610-
dc.identifier.issn0008-6223-
dc.identifier.urihttp://hdl.handle.net/10722/298238-
dc.description.abstractBeing a representative candidate from the two-dimensional (2D) materials family, graphene has been one of the most intensively researched candidates because of its ultrahigh carrier mobility, quantum Hall effects, excellent mechanical property and high optical transmittance. Unfortunately, the lack of a band gap makes graphene a poor fit for digital electronics, where the current on/off ratio is critical. Huge efforts have been advocated to discover new 2D layered materials with wonderful properties, which complements the needs of 2D electronics. Appropriately designed graphene based hybrid structure could perform better than its counterpart alone. The graphene hybrid structure soon become one of the most exciting frontiers in advanced 2D materials, and many efforts have been made to create artificial heterostructures by assembling of graphene with various layered materials. In this review, we present the recent development in synthesis and applications of graphene based 2D heterostructures. Although 2D transition metal dichalcogenide semiconductors have been demonstrated as strong candidates for next-generation electronics and optoelectronics, by combining advantages of various properties of 2D materials together with graphene, it is highly possible to build entire digital circuits using atomically thin components, and create many novel devices that can be utilized in different areas.-
dc.languageeng-
dc.relation.ispartofCarbon-
dc.titleSynthesis and optoelectronic applications of graphene/transition metal dichalcogenides flat-pack assembly-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.carbon.2017.11.030-
dc.identifier.scopuseid_2-s2.0-85034851167-
dc.identifier.volume127-
dc.identifier.spage602-
dc.identifier.epage610-
dc.identifier.isiWOS:000417484000068-
dc.identifier.issnl0008-6223-

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