Scalable fabrication of a complementary logic inverter based on MoS<inf>2</inf> fin-shaped field effect transistors

Abstract

Integration of high performance n-type and p-type field-effect transistors with complementary device operation in the same kind of layered materials is highly desirable for pursuing low power and flexible next-generation electronics. In this work, we have shown a well-mannered growth of MoS on a fin-shaped oxide structure and integration of both n-type and p-type MoS by using a traditional implantation technique. With the advance of the fin-shaped structure, the maxima and the effective ON current density for the MoS fin-shaped field-effect transistors are respectively obtained to be about 50 μA μm (normalized by the circumference of the fin) and around 500 μA μm (only normalized by the fin size), while its ON/OFF ratio is more than 10 with low OFF current of a few pA. Based on our n-type and p-type MoS fin-shaped field-effect transistors, the complementary MoS inverter with a high DC voltage gain of more than 20 is acquired. Our results provide evidence for complementary 2D material operation in the same materials, a promising avenue for the development of high performance and high-density complementary 2D electronic devices. 2 2 2 2 2 -1 -1 6