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Article: Graphene-GaAs/Alx Ga1-x As heterostructure dual-function field-effect transistor

TitleGraphene-GaAs/Al<inf>x</inf> Ga<inf>1-x</inf> As heterostructure dual-function field-effect transistor
Authors
Tang, Chiu ChunLi, Ming YangLi, L. J.Chi, C. C.Chen, Jeng Chung
Issue Date2012
Citation
Applied Physics Letters, 2012, v. 101, n. 20, article no. 202104 How to Cite?
DOI: http://dx.doi.org/10.1063/1.4767387
AbstractWe have integrated chemical vapor-deposited graphene and GaAs/Al Ga As heterostructure into a hybrid field effect transistor (FET). Depending on the operation scheme, graphene can be utilized either as a gate electrode for a GaAs-based high electron mobility transistor (HEMT) or as a channel material gated by two dimensional electron gas (2DEG) formed in the interface of a heterojunction. Our studies reveal that 2DEG can function as an effective back-electrode to tune the ambipolar effect of graphene. The performance of graphene FET (GFET) is limited by the interface band bending of the heterojunction associated with the gating voltages and the intrinsic surface morphology of GaAs substrate. Our results bode a way to implement HEMT/GEFT-based bi-FET integrated circuits. © 2012 American Institute of Physics. x 1-x
Persistent Identifierhttp://hdl.handle.net/10722/298577
ISSN
0003-6951
2021 Impact Factor: 3.971
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID
WOS:000311477500014

 

DC FieldValueLanguage
dc.contributor.authorTang, Chiu Chun-
dc.contributor.authorLi, Ming Yang-
dc.contributor.authorLi, L. J.-
dc.contributor.authorChi, C. C.-
dc.contributor.authorChen, Jeng Chung-
dc.date.accessioned2021-04-08T03:08:48Z-
dc.date.available2021-04-08T03:08:48Z-
dc.date.issued2012-
dc.identifier.citationApplied Physics Letters, 2012, v. 101, n. 20, article no. 202104-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/298577-
dc.description.abstractWe have integrated chemical vapor-deposited graphene and GaAs/Al Ga As heterostructure into a hybrid field effect transistor (FET). Depending on the operation scheme, graphene can be utilized either as a gate electrode for a GaAs-based high electron mobility transistor (HEMT) or as a channel material gated by two dimensional electron gas (2DEG) formed in the interface of a heterojunction. Our studies reveal that 2DEG can function as an effective back-electrode to tune the ambipolar effect of graphene. The performance of graphene FET (GFET) is limited by the interface band bending of the heterojunction associated with the gating voltages and the intrinsic surface morphology of GaAs substrate. Our results bode a way to implement HEMT/GEFT-based bi-FET integrated circuits. © 2012 American Institute of Physics. x 1-x-
dc.languageeng-
dc.relation.ispartofApplied Physics Letters-
dc.titleGraphene-GaAs/Al<inf>x</inf> Ga<inf>1-x</inf> As heterostructure dual-function field-effect transistor-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1063/1.4767387-
dc.identifier.scopuseid_2-s2.0-84870051903-
dc.identifier.volume101-
dc.identifier.issue20-
dc.identifier.spagearticle no. 202104-
dc.identifier.epagearticle no. 202104-
dc.identifier.isiWOS:000311477500014-
dc.identifier.issnl0003-6951-

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