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- Publisher Website: 10.1080/10584580108012882
- Scopus: eid_2-s2.0-0035027512
- WOS: WOS:000167524600016
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Conference Paper: Properties of PbZrx Ti1-x O3 /CeO2 /SiO2 /Si structure
| Title | Properties of PbZr<inf>x</inf>Ti<inf>1-x</inf>O<inf>3</inf>/CeO<inf>2</inf>/SiO<inf>2</inf>/Si structure |
|---|---|
| Authors | |
| Keywords | Ferroelectric FET Ferroelectric thin film PbZrxTi1−xO3 (PZT) Pulsed laser deposition (PLD) |
| Issue Date | 2001 |
| Citation | Integrated Ferroelectrics, 2001, v. 34, n. 1-4, p. 131-137 How to Cite? |
| Abstract | We report the crystalline quality and electrical properties of PbZrxTi1-xO3 (PZT) films on n-type Si(100) substrates with CeO2/SiO2 dual buffer layers. PZT films and CeO2 buffer layers were prepared by pulsed laser deposition technique, and SiO2 buffer layers were formed by thermal dry oxidation. It was found that CeO2/SiO2 dual buffer layers effectively prevented Si and Pb interdiffusion between PZT and Si substrates. Furthermore, the capacitance-voltage (C-V) characteristics of the PZT/CeO2/SiO2/Si heterostructures demonstrated ferroelectric switching properties, showing a memory window as large as 2.7 V at 1 MHz. |
| Persistent Identifier | http://hdl.handle.net/10722/310350 |
| ISSN | 2021 Impact Factor: 0.836 2020 SCImago Journal Rankings: 0.258 |
| ISI Accession Number ID |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Liu, X. | - |
| dc.contributor.author | Yin, X. J. | - |
| dc.contributor.author | Liu, Z. G. | - |
| dc.contributor.author | Wang, L. | - |
| dc.contributor.author | Li, J. | - |
| dc.contributor.author | Zhu, X. H. | - |
| dc.contributor.author | Chen, K. J. | - |
| dc.date.accessioned | 2022-01-31T06:04:40Z | - |
| dc.date.available | 2022-01-31T06:04:40Z | - |
| dc.date.issued | 2001 | - |
| dc.identifier.citation | Integrated Ferroelectrics, 2001, v. 34, n. 1-4, p. 131-137 | - |
| dc.identifier.issn | 1058-4587 | - |
| dc.identifier.uri | http://hdl.handle.net/10722/310350 | - |
| dc.description.abstract | We report the crystalline quality and electrical properties of PbZrxTi1-xO3 (PZT) films on n-type Si(100) substrates with CeO2/SiO2 dual buffer layers. PZT films and CeO2 buffer layers were prepared by pulsed laser deposition technique, and SiO2 buffer layers were formed by thermal dry oxidation. It was found that CeO2/SiO2 dual buffer layers effectively prevented Si and Pb interdiffusion between PZT and Si substrates. Furthermore, the capacitance-voltage (C-V) characteristics of the PZT/CeO2/SiO2/Si heterostructures demonstrated ferroelectric switching properties, showing a memory window as large as 2.7 V at 1 MHz. | - |
| dc.language | eng | - |
| dc.relation.ispartof | Integrated Ferroelectrics | - |
| dc.subject | Ferroelectric FET | - |
| dc.subject | Ferroelectric thin film | - |
| dc.subject | PbZrxTi1−xO3 (PZT) | - |
| dc.subject | Pulsed laser deposition (PLD) | - |
| dc.title | Properties of PbZr<inf>x</inf>Ti<inf>1-x</inf>O<inf>3</inf>/CeO<inf>2</inf>/SiO<inf>2</inf>/Si structure | - |
| dc.type | Conference_Paper | - |
| dc.description.nature | link_to_subscribed_fulltext | - |
| dc.identifier.doi | 10.1080/10584580108012882 | - |
| dc.identifier.scopus | eid_2-s2.0-0035027512 | - |
| dc.identifier.volume | 34 | - |
| dc.identifier.issue | 1-4 | - |
| dc.identifier.spage | 131 | - |
| dc.identifier.epage | 137 | - |
| dc.identifier.isi | WOS:000167524600016 | - |