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Article: Intrinsic Nonlinear Hall Effect and Gate-Switchable Berry Curvature Sliding in Twisted Bilayer Graphene

TitleIntrinsic Nonlinear Hall Effect and Gate-Switchable Berry Curvature Sliding in Twisted Bilayer Graphene
Authors
Issue Date11-Aug-2023
PublisherAmerican Physical Society
Citation
Physical Review Letters, 2023, v. 131, n. 6, p. 1-6 How to Cite?
Abstract

Though the observation of the quantum anomalous Hall effect and nonlocal transport response reveals nontrivial band topology governed by the Berry curvature in twisted bilayer graphene, some recent works reported nonlinear Hall signals in graphene superlattices that are caused by the extrinsic disorder scattering rather than the intrinsic Berry curvature dipole moment. In this Letter, we report a Berry curvature dipole induced intrinsic nonlinear Hall effect in high-quality twisted bilayer graphene devices. We also find that the application of the displacement field substantially changes the direction and amplitude of the nonlinear Hall voltages, as a result of a field-induced sliding of the Berry curvature hotspots. Our Letter not only proves that the Berry curvature dipole could play a dominant role in generating the intrinsic nonlinear Hall signal in graphene superlattices with low disorder densities, but also demonstrates twisted bilayer graphene to be a sensitive and fine-tunable platform for second harmonic generation and rectification.​​​


Persistent Identifierhttp://hdl.handle.net/10722/331210
ISSN
2023 Impact Factor: 8.1
2023 SCImago Journal Rankings: 3.040

 

DC FieldValueLanguage
dc.contributor.authorHuang, Meizhen-
dc.contributor.authorWu, Zefei-
dc.contributor.authorZhang, Xu-
dc.contributor.authorFeng, Xuemeng-
dc.contributor.authorZhou, Zishu-
dc.contributor.authorWang, Shi-
dc.contributor.authorChen, Yong-
dc.contributor.authorCheng, Chun-
dc.contributor.authorSun, Kai-
dc.contributor.authorMeng, Zi Yang-
dc.contributor.authorWang, Ning-
dc.date.accessioned2023-09-21T06:53:44Z-
dc.date.available2023-09-21T06:53:44Z-
dc.date.issued2023-08-11-
dc.identifier.citationPhysical Review Letters, 2023, v. 131, n. 6, p. 1-6-
dc.identifier.issn0031-9007-
dc.identifier.urihttp://hdl.handle.net/10722/331210-
dc.description.abstract<p>Though the observation of the quantum anomalous Hall effect and nonlocal transport response reveals nontrivial band topology governed by the Berry curvature in twisted bilayer graphene, some recent works reported nonlinear Hall signals in graphene superlattices that are caused by the extrinsic disorder scattering rather than the intrinsic Berry curvature dipole moment. In this Letter, we report a Berry curvature dipole induced intrinsic nonlinear Hall effect in high-quality twisted bilayer graphene devices. We also find that the application of the displacement field substantially changes the direction and amplitude of the nonlinear Hall voltages, as a result of a field-induced sliding of the Berry curvature hotspots. Our Letter not only proves that the Berry curvature dipole could play a dominant role in generating the intrinsic nonlinear Hall signal in graphene superlattices with low disorder densities, but also demonstrates twisted bilayer graphene to be a sensitive and fine-tunable platform for second harmonic generation and rectification.​​​</p>-
dc.languageeng-
dc.publisherAmerican Physical Society-
dc.relation.ispartofPhysical Review Letters-
dc.titleIntrinsic Nonlinear Hall Effect and Gate-Switchable Berry Curvature Sliding in Twisted Bilayer Graphene-
dc.typeArticle-
dc.identifier.doi10.1103/PhysRevLett.131.066301-
dc.identifier.volume131-
dc.identifier.issue6-
dc.identifier.spage1-
dc.identifier.epage6-
dc.identifier.eissn1079-7114-
dc.identifier.issnl0031-9007-

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