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Article: Delay analysis of graphene field-effect transistors

TitleDelay analysis of graphene field-effect transistors
Authors
Wang, HanHsu, AllenLee, Dong SeupKim, Ki KangKong, JingPalacios, Tomas
KeywordsCarrier velocity
chemical vapor deposition graphene
delay analysis
graphene FET (GFET)
sapphire
Issue Date2012
Citation
IEEE Electron Device Letters, 2012, v. 33, n. 3, p. 324-326 How to Cite?
DOI: http://dx.doi.org/10.1109/LED.2011.2180886
AbstractIn this letter, we analyze the carrier transit delay in graphene field-effect transistors (GFETs).The extraction of the intrinsic delay provides a new way to directly estimate carrier velocity from the experimental data, while the breakdown of the total delay into intrinsic, extrinsic, and parasitic components can offer valuable information for optimizing RF GFET structures. © 2012 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/335217
ISSN
0741-3106
2021 Impact Factor: 4.816
2020 SCImago Journal Rankings: 1.337
ISI Accession Number ID
WOS:000300580000008

 

DC FieldValueLanguage
dc.contributor.authorWang, Han-
dc.contributor.authorHsu, Allen-
dc.contributor.authorLee, Dong Seup-
dc.contributor.authorKim, Ki Kang-
dc.contributor.authorKong, Jing-
dc.contributor.authorPalacios, Tomas-
dc.date.accessioned2023-11-17T08:24:01Z-
dc.date.available2023-11-17T08:24:01Z-
dc.date.issued2012-
dc.identifier.citationIEEE Electron Device Letters, 2012, v. 33, n. 3, p. 324-326-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10722/335217-
dc.description.abstractIn this letter, we analyze the carrier transit delay in graphene field-effect transistors (GFETs).The extraction of the intrinsic delay provides a new way to directly estimate carrier velocity from the experimental data, while the breakdown of the total delay into intrinsic, extrinsic, and parasitic components can offer valuable information for optimizing RF GFET structures. © 2012 IEEE.-
dc.languageeng-
dc.relation.ispartofIEEE Electron Device Letters-
dc.subjectCarrier velocity-
dc.subjectchemical vapor deposition graphene-
dc.subjectdelay analysis-
dc.subjectgraphene FET (GFET)-
dc.subjectsapphire-
dc.titleDelay analysis of graphene field-effect transistors-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/LED.2011.2180886-
dc.identifier.scopuseid_2-s2.0-84862815077-
dc.identifier.volume33-
dc.identifier.issue3-
dc.identifier.spage324-
dc.identifier.epage326-
dc.identifier.isiWOS:000300580000008-

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